Semiconductor Channel Structure With Irregular Dislocation Blocking
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving improved electric characteristics and reliability, particularly in high-voltage and high-current applications, where defects such as dislocations can significantly impact performance.
Innovation Solution
The semiconductor device incorporates a channel layer with a dislocation blocking layer containing irregularly arranged dislocation blocking patterns. This configuration reduces dislocation density and improves the interface quality between the channel and barrier layers, enhancing the device's electric characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor device structures are used, then manufacturing is simpler, but dislocation density is high leading to poor reliability
Solution Approach 1:
The channel layer is segmented into multiple regions by introducing dislocation blocking layers at different depths. These layers divide the channel layer into first, second, and third regions, each with different dislocation densities. The segmentation prevents dislocations from propagating uniformly throughout the channel, thereby improving reliability without requiring complete structural redesign.
Solution Approach 2:
Dislocation blocking layers are introduced as intermediary structures between the substrate and the channel regions. These layers act as mediators that intercept and block dislocation propagation from the substrate upward into the channel layer, preventing harmful defects from reaching critical regions while maintaining overall device functionality.
2Reliability
If dislocation blocking layers are added to reduce dislocation density, then reliability improves, but manufacturing complexity increases
Solution Approach 1:
Dislocation blocking layers are formed preliminarily during the epitaxial growth process, before final device fabrication steps. By incorporating these layers early in the manufacturing sequence, the patent prevents dislocation propagation in advance, simplifying subsequent processing steps and improving yield without adding complex post-fabrication procedures.
Solution Approach 2:
The patent utilizes parameter changes in the epitaxial growth process to form dislocation blocking layers with specific compositions and thicknesses. By adjusting growth parameters such as temperature, pressure, and precursor ratios, the blocking layers are integrated into the existing manufacturing flow without requiring fundamentally new equipment or processes, thereby maintaining ease of manufacture while achieving improved reliability.
3Reliability
If irregularly arranged dislocation blocking patterns are used, then dislocation blocking effectiveness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs asymmetric, irregular arrangements of dislocation blocking patterns within the dislocation blocking layers. Rather than uniform periodic structures, the patterns are deliberately arranged irregularly to more effectively intercept dislocations propagating from various directions. This asymmetric arrangement improves blocking effectiveness while the patterns are formed using standard lithography and etching processes, avoiding excessive precision requirements.
Solution Approach 2:
The dislocation blocking layers are designed with sufficient thickness and pattern density to provide excessive blocking capability, ensuring that even with variations in pattern arrangement, the dislocation blocking effectiveness is maintained. This partial redundancy compensates for manufacturing tolerances and reduces the stringency of precision requirements while still achieving the desired reliability improvement.
Data Source
AI summary
A semiconductor device includes a channel layer having a first energy band gap, a barrier layer on the channel layer, the barrier layer including a material having a second energy band gap that is different from the first energy band gap of the channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and at least one dislocation blocking layer in the channel layer, the at least one dislocation blocking layer including a plurality of dislocation blocking patterns extending in the channel layer and in a first direction parallel with a bottom surface of the channel layer, where the plurality of dislocation blocking patterns are arranged at irregular intervals along the first direction.