Channel-Doped Transistor Structure for Higher Breakdown Voltage

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Solution Overview

Problem

Silicon-on-insulator (SOI) transistors and thin-film transistors (TFTs) have lower breakdown voltage compared to bulk silicon transistors due to the absence of extended lightly doped drain (LDD) regions, which affects their performance in memory devices like NAND flash memory.

Innovation Solution

Incorporating heavily doped regions into the channel layer of SOI transistors and TFTs to distribute channel potential and enhance breakdown voltage, using various configurations and materials to optimize channel potential distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If extended lightly doped drain (LDD) regions are used in bulk silicon transistors, then breakdown voltage is improved, but device structure becomes more complex

Engineering Contradiction:

Improvebreakdown voltageVSAvoiddevice structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the essential function of the LDD region (potential distribution) and implements it through a simplified heavily doped region within the channel layer, eliminating the need for extended LDD structures while maintaining breakdown voltage improvement

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies local quality by creating a heavily doped region specifically within the channel layer at a defined position, concentrating the dopant to achieve potential distribution effects locally without requiring extended structures throughout the entire device

Inventive Principle:

Principle #3Local quality

2Device complexity

If SOI transistors or TFTs are used without extended LDD regions, then device structure is simplified, but breakdown voltage decreases

Engineering Contradiction:

Improvedevice structureVSAvoidbreakdown voltage

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent changes the doping parameter by introducing a heavily doped region with high dopant concentration within the channel layer, which modifies the electrical characteristics to improve breakdown voltage while maintaining structural simplicity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent segments the channel layer into distinct regions: a first region with first dopant concentration and a second region with second dopant concentration, creating potential distribution zones that improve breakdown voltage without extending the overall device structure

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The incorporation of heavily doped regions improves the breakdown voltage of SOI transistors and TFTs, enhancing their performance in memory devices by providing a faster channel potential redistribution and improved reliability.

Implementation Method 1

the at least one heavily doped region distributes channel potential along the channel layer to improve the breakdown voltage of the transistor

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20250359063A1Transistor with channel layer including heavily doped region

Publication Date: 2025.11.20 MICRON TECHNOLOGY INC

AI summary

A transistor includes a source, a drain, a gate layer, an undoped or lightly doped channel layer, and a gate dielectric layer. The undoped or lightly doped channel layer extends between the source and the drain. The channel layer includes at least one heavily doped region to distribute channel potential along the channel layer. The gate dielectric layer is between the gate layer and the channel layer.