Channel-Layer Heat Dissipation Structure in High-Power Semiconductor Modules
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Solution Overview
Problem
High-power, high-frequency semiconductor devices used in 5G millimeter-wave communication systems face challenges in heat dissipation, leading to potential performance deterioration due to the high thermal resistance of existing materials.
Innovation Solution
A semiconductor device is designed with a low thermal resistance material section in contact with the buffer layer, allowing heat generated in the channel layer to be efficiently dissipated to the semiconductor layer, incorporating a low thermal resistance material and a low resistance material section to improve heat management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high power output is used for millimeter-wave communication, then communication performance is improved, but heat dissipation becomes insufficient
Solution Approach 1:
The patent introduces a low thermal resistance material section with a thermal resistance of 10^-3 cm²/W or lower in the region where heat is generated in the channel layer. This local optimization of thermal properties allows efficient heat dissipation from the hot spot without requiring the entire device structure to have high thermal conductivity, thus resolving the contradiction between high power output and heat dissipation.
Solution Approach 2:
The patent employs a composite structure combining different materials with complementary properties: a semiconductor layer for high-frequency operation, a low thermal resistance material section for heat dissipation, and a buffer layer for lattice matching. This composite approach enables the device to simultaneously achieve high power output capability and effective thermal management.
2Ease of manufacture
If conventional materials are used in the semiconductor layer, then manufacturing is easier, but thermal resistance is too high
Solution Approach 1:
The patent introduces a buffer layer between the semiconductor layer and the low thermal resistance material section. This buffer layer serves as an intermediary that provides lattice matching and reduces thermal stress, enabling the integration of materials with vastly different thermal properties without compromising device reliability or manufacturing feasibility.
3Speed
If high frequency operation is implemented, then communication speed is improved, but characteristic deterioration due to heat increases
Solution Approach 1:
The patent extracts the heat dissipation function from the conventional semiconductor material and implements it through a separate low thermal resistance material section. This separation allows the semiconductor layer to operate at high frequencies without being constrained by thermal management limitations, as the heat extraction path is independently optimized.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the temperature of the channel layer and its vicinity, thereby suppressing characteristic deterioration and enhancing heat dissipation properties compared to traditional designs.
Implementation Method 1
The low thermal resistance material section includes a low thermal resistance material having a lower thermal resistance than the channel layer, and is in contact with the channel layer and the buffer layer
Data Source
AI summary
A semiconductor device according to one embodiment of the present disclosure includes a low resistance material section and a low thermal resistance material section. The low resistance material section is in contact with a barrier layer, a channel layer, and a source electrode or a drain electrode, and includes a low resistance material having a lower resistance than the channel layer. The low thermal resistance material section is in contact with the channel layer and the buffer layer, and includes a low thermal resistance material having a lower thermal resistance than the channel layer.