Semiconductor device and manufacturing method thereof
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Solution Overview
Problem
The shrinking sizes and high integration density of semiconductor devices pose significant challenges for heat dissipation, as existing technologies struggle to effectively manage the increasing thermal loads within compact device architectures.
Innovation Solution
The implementation of a heat transfer layer with high thermal conductivity, typically made of materials like boron nitride or aluminum nitride, is integrated between the substrate and the channel material layer in semiconductor devices, enhancing heat dissipation by creating an atomic smooth interface and allowing for efficient heat dissipation through the heat transfer layer located underneath the source and drain terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is shrunk and integration density is increased, then device functionality and capacity are improved, but heat dissipation capability deteriorates
Solution Approach 1:
A heat transfer layer is introduced as an intermediary component between the substrate and the channel material layer. This intermediate layer serves as a dedicated thermal management component that facilitates heat flow from the heat-generating region (source/drain terminals) to the substrate, resolving the heat dissipation problem without compromising the high integration density design.
Solution Approach 2:
The thermal conductivity parameter of the interface between substrate and channel material is significantly enhanced by introducing the heat transfer layer with high thermal conductivity. This parameter change transforms the thermal management capability of the device, allowing efficient heat dissipation while maintaining compact dimensions and high integration density.
2Volume of moving object
If device size is reduced, then device footprint is minimized, but heat dissipation efficiency deteriorates
Solution Approach 1:
The heat transfer layer is selectively positioned in the device region where heat generation is most intense (underneath source and drain terminals). This localized approach concentrates thermal management resources where they are most needed, achieving efficient heat dissipation within the minimal device footprint without requiring global thermal management structures.
3Productivity
If high integration density is achieved, then device capacity is improved, but thermal management capability deteriorates
Solution Approach 1:
The heat transfer layer is integrated into the device structure during the manufacturing process, before the device operates. This preliminary incorporation of thermal management functionality ensures that heat dissipation capability is built-in from the outset, supporting high integration density and device capacity while maintaining reliability through proactive thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly improves heat dissipation efficiency, enhances device performance, and achieves better current injection efficiency by allowing heat generated during operation to be dissipated effectively, thereby addressing the thermal management challenges in densely packed semiconductor devices.
Implementation Method 1
a first heat transfer layer disposed over a substrate... allowing heat generated during operation to be dissipated effectively through the heat transfer layer
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a heat transfer layer disposed over a substrate, a channel material layer, a gate structure and source and drain terminals. The channel material layer has a first surface and a second surface opposite to the first surface, and the channel material layer is disposed on the heat transfer layer with the first surface in contact with the heat transfer layer. The gate structure is disposed above the channel material layer. The source and drain terminals are in contact with the channel material layer and located at two opposite sides of the gate structure.