Semiconductor Channel Interface with Ge-Free Oxide Protection Layer
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Solution Overview
Problem
Current semiconductor devices face challenges in improving drive currents and interfacial issues between semiconductive channel regions and gate structures, particularly in FinFETs, due to the limitations of germanium-containing materials.
Innovation Solution
The implementation of a Ge-free semiconductive protection layer between the semiconductive channel region and the gate structure, using oxidation and annealing processes to purify the silicon components and reduce germanium content, thereby enhancing the interface quality and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If germanium-containing materials are used to form channel regions to improve electron mobility and drive currents, then the drive current and electron mobility are improved, but interfacial issues and reliability problems occur between the channel region and gate structure
Solution Approach 1:
An oxide layer is introduced as an intermediary between the germanium-containing channel region and the gate structure. This oxide layer acts as a buffer that prevents direct interaction between the germanium and the gate, eliminating interfacial issues while preserving the high electron mobility benefits of germanium in the channel region.
Solution Approach 2:
The interface between the germanium channel and gate structure is segmented by inserting an oxide layer. This divides the previously direct interface into two separate interfaces (channel-oxide and oxide-gate), allowing each interface to be optimized independently and preventing harmful direct interactions.
2Power
If germanium-containing materials are used to improve drive currents, then the drive current increases, but interface traps and bulk traps increase reducing device performance
Solution Approach 1:
The oxide layer serves as a mediator that prevents the generation of interface traps at the channel-gate interface. By isolating the germanium channel from the gate structure, the oxide layer eliminates the source of interface traps while allowing the high drive current capability of germanium to be maintained.
3Speed
If germanium-containing materials are used to enhance channel performance, then electron mobility improves, but interfacial quality deteriorates
Solution Approach 1:
The oxide layer is introduced as an intermediary that decouples the requirements for high electron mobility in the channel from the requirements for high interfacial quality at the gate interface. This allows the channel to maintain high germanium content for electron mobility while the oxide interface provides the necessary quality for reliable gate operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the interfacial properties, increases electron mobility, and achieves high-speed, low-power semiconductor devices by reducing interface and bulk traps, while ensuring reliable device performance.
Implementation Method 1
using oxidation and annealing processes to purify the silicon components and reduce germanium content
Implementation Method 2
using oxidation and annealing processes to purify the silicon components and reduce germanium content
Data Source
AI summary
A method includes forming a semiconductive channel structure over a substrate. A semiconductive layer is deposited over the semiconductive channel structure. The semiconductive layer and the semiconductive channel structure includes different materials. An oxidation process is performed to the semiconductive layer to form an oxidation layer over a remaining portion of the semiconductive layer. The oxidation layer is heated after the oxidation process is performed. A gate structure is formed over the oxidation layer.