Semiconductor Channel Ridge Recrystallization Without Epitaxy
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices are costly due to the frequent use of epitaxial growth processes, which are resource-intensive and expensive.
Innovation Solution
A method that reduces the need for epitaxial growth by depositing amorphous material layers on a substrate and then recrystallizing them, forming a channel and source/drain layers as a ridge, and using selective etching to create a self-aligned gate structure, thereby lowering manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If epitaxial growth processes are used to form semiconductor device structures, then crystalline materials with improved device performance are achieved, but manufacturing costs increase due to resource-intensive processes
Solution Approach 1:
The patent changes the material state parameter from crystalline to amorphous for the channel and source/drain layers. By depositing amorphous semiconductor material and then crystallizing it in-situ through thermal processing, the method achieves crystalline quality without requiring expensive external epitaxial growth equipment, thereby reducing manufacturing costs while maintaining device performance
Solution Approach 2:
The patent extracts the crystallization step from the external epitaxial growth process and incorporates it into the standard deposition-thermal processing flow. The channel and source/drain layers are first deposited as amorphous material and then crystallized in-situ by heating to elevated temperatures, eliminating the need for separate expensive epitaxial growth equipment and processes
2Reliability
If epitaxial growth processes are used to form semiconductor device structures, then crystalline materials are produced, but resource consumption increases making the process expensive
Solution Approach 1:
The patent combines multiple functions into continuous processing steps. The deposition of amorphous material and its subsequent crystallization are performed in a continuous flow without breaking the process, utilizing the thermal energy already present in the deposition chamber or applying controlled heating to achieve crystallization, thereby reducing overall resource consumption compared to separate epitaxial growth operations
Solution Approach 2:
The patent uses thermal energy as an intermediary to transform amorphous deposited material into crystalline structure. By applying controlled heating to the amorphous semiconductor layers, the material undergoes phase transformation to form high-quality crystalline structures without requiring the complex chemical environments and high resource inputs of traditional epitaxial growth processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs by minimizing the use of external growth processes and achieving crystalline materials for improved device performance.
Implementation Method 1
forming a channel layer on a sidewall of the ridge by deposition
Implementation Method 2
performing a crystallization process to recrystallize the channel layer
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes: forming a channel defining layer and a source/drain layer sequentially on a substrate of a crystalline material; patterning the channel defining layer and the source/drain layer as a ridge protruding relative to the substrate; forming a channel layer on a sidewall of the ridge by deposition; and performing a crystallization process to recrystallize the channel layer.