Charge Chamber Gas Dosing for Short-Pulse Semiconductor Processing
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Solution Overview
Problem
Existing semiconductor processing systems face challenges in delivering precise and repeatable chemical dosage within a very short pulse time, leading to inefficiencies in processing speed and chemical consumption.
Innovation Solution
A semiconductor processing system with a control assembly that includes a charge chamber, inlet and outlet valves, and a pressure transducer, which controls the flow of input gas to ensure stable and repeatable chemical dosage by alternating activation of inlet and outlet valves, allowing for precise chemical delivery within a fraction of a second.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the pulse time is relaxed to ensure sufficient chemical dosage, then the chemical dosage precision is improved, but the processing speed deteriorates
Solution Approach 1:
The charge chamber pre-accumulates chemical dosage before the actual deposition pulse, allowing the main pulse to be very short while still delivering sufficient chemical quantity. The inlet valve charges the charge chamber with chemical precursor during a longer period, then the outlet valve rapidly releases the pre-charged chemical during the short deposition pulse, resolving the contradiction between dosage sufficiency and pulse time shortening.
Solution Approach 2:
The chemical delivery process is segmented into two distinct phases: a charge phase where the inlet valve fills the charge chamber with chemical precursor, and a release phase where the outlet valve rapidly delivers the pre-charged chemical to the process chamber. This segmentation allows the charge phase to be longer for sufficient dosage accumulation, while the release phase remains short for high processing speed.
2Reliability
If the pulse time is extended to ensure repeatable chemical dosage, then the dosage consistency is improved, but the time consumption increases
Solution Approach 1:
The charge chamber serves as a pre-preparation reservoir that accumulates consistent chemical dosage before each deposition cycle. By charging the charge chamber to a standardized level before each pulse, the system ensures repeatable chemical dosage delivery without requiring extended pulse times during the actual deposition phase.
Solution Approach 2:
The charge chamber acts as an intermediary between the chemical source and the process chamber, buffering and standardizing the chemical dosage. This intermediary ensures that variations in upstream chemical supply do not directly affect the deposition process, thereby improving dosage consistency while maintaining short pulse times.
3Manufacturing precision
If the chemical dosage is increased to improve film quality, then the film deposition quality is improved, but the chemical consumption increases
Solution Approach 1:
The charge chamber pre-concentrates the chemical precursor, allowing precise control of the chemical dosage delivered to the process chamber. By charging the charge chamber to a specific pressure or volume, the system delivers exactly the required chemical amount for high-quality film deposition, avoiding both under-dosage and excessive chemical consumption.
Solution Approach 2:
The system controls chemical dosage by adjusting parameters such as charge chamber pressure, charge time, and outlet valve opening duration. These parameter changes enable precise control of chemical delivery quantity, ensuring sufficient dosage for high-quality film formation while minimizing chemical consumption through optimized control settings.
Data Source
AI summary
This disclosure relates to a semiconductor processing system, and control assembly and method thereof. The semiconductor processing system includes a mass flow controller (MFC), a control assembly and a process chamber. The MFC is coupled to a gas source to receive an input gas. The control assembly, which is coupled to the MFC, includes a charge chamber, an inlet valve and an outlet valve. The charge chamber is arranged to accommodate the input gas. The inlet valve is arranged to control a charge of the input gas for the charge chamber. The outlet valve is arranged to control a release of the input gas accommodated in the charge chamber. The process chamber is coupled to the outlet valve of the control assembly.