Charge Transfer Channel Geometry for 100 MHz Clocked Carrier Flow
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
At high clock frequencies (above 100 MHz, particularly above 250 MHz up to 400 MHz), charge carriers in semiconductor structures often fail to transfer efficiently across the charge transfer channel due to increased losses.
Innovation Solution
The semiconductor structure incorporates a charge transfer channel with a sequence of electrically isolated gates and a doped conduction layer, where the channel is formed by the overlap of the electrostatic effect of the gates with the conduction layer. This design includes a region of protuberance and constriction in the gates to optimize charge carrier flow, reducing resistance and losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If charge carriers are transported through a conventional charge transfer channel at high clock frequencies, then the clock frequency increases, but charge carrier losses increase
Solution Approach 1:
The patent applies local quality by creating a non-uniform channel cross-section with specific regions of protuberance and constriction. The protuberance region (wider cross-section) and constriction region (narrower cross-section) are strategically positioned within the charge transfer channel to locally modify charge carrier behavior, reducing losses at high clock frequencies while maintaining overall transport efficiency
Solution Approach 2:
The patent implements dynamics by making the channel geometry variable along the flow direction rather than uniform. The cross-sectional area changes dynamically through the protuberance and constriction regions, creating varying electric field distributions that adapt to the charge carrier transport needs at different positions and clock frequencies
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables charge carriers to flow with reduced resistance and fewer losses, enhancing the efficiency of charge transfer at high clock frequencies.
Implementation Method 1
The charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer
Data Source
AI summary
A charge transfer device having a charge transfer channel in a semiconductor substrate. The charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer. A clock generator has a clock frequency of more than 100 MHz which applies changes in potential at the clock frequency to the gates, for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer. The charge transfer channel in the region of one gate has a region of a constriction in which the cross-section in the flow direction decreases, and is arranged at least in the region of the gate upstream of the region of the protuberance or in the regions of the gate upstream of the protuberance and the adjoining gate of the protuberance.