Charge Injection Suppression in Active Pixel Sensors

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

CMOS imager circuits face errors due to unwanted charge injection, which cannot be fully subtracted using correlated double sampling (CDS), leading to noise in output signals and reduced dynamic range, especially as the floating diffusion region area scales for higher conversion gain.

Innovation Solution

Maintaining the RST signal at a positive voltage greater than ground but less than the threshold voltage of the reset transistor during the readout period to minimize charge injection, thereby increasing the available voltage swing and reducing lag without contributing to noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the floating diffusion region area is scaled down to increase conversion gain, then the conversion gain is improved, but charge injection errors increase and cannot be fully subtracted using CDS

Engineering Contradiction:
Improveconversion gainVSAvoidcharge injection errors
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the voltage parameter of the RST signal from a conventional ground level to a positive voltage level (e.g., +0.3V to +1.0V) during the readout period. This parameter change suppresses charge injection errors by preventing charge redistribution from the reset transistor gate-source overlap capacitor into the floating diffusion region, thereby resolving the contradiction between high conversion gain and charge injection errors.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If the RST signal is maintained at ground level during readout, then the circuit operation is simple, but charge injection occurs reducing dynamic range

Engineering Contradiction:
Improvecircuit operation simplicityVSAvoiddynamic range
Core Design Contradiction:
Device complexityVSQuantity of substance

Solution Approach 1:

The patent modifies the RST signal voltage parameter from ground level to a controlled positive voltage level during the readout period. This change suppresses charge injection into the floating diffusion region, thereby increasing the available voltage swing and dynamic range while maintaining manageable circuit complexity through controlled voltage level management.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If correlated double sampling is used to subtract charge injection errors, then some noise is reduced, but residual noise remains and dynamic range is reduced

Engineering Contradiction:
Improvenoise reductionVSAvoiddynamic range
Core Design Contradiction:
Measurement precisionVSQuantity of substance

Solution Approach 1:

The patent applies preliminary anti-action by maintaining the RST signal at a positive voltage level during readout to prevent charge injection errors from occurring in the first place. This proactive approach eliminates the need for CDS subtraction and preserves the full dynamic range while achieving superior noise performance compared to reactive CDS methods.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses charge injection, enhances the dynamic range, and improves the peak conversion gain by maintaining a positive voltage level for the RST signal during readout, reducing unwanted charge leakage and increasing the linear full well capacity.

Implementation Method 1

each pixel cell receives photons of light and converts those photons into charge carried by electrons

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS7619671B2Method, apparatus and system for charge injection suppression in active pixel sensors
Publication Date: 2009.11.17 APTINA IMAGING CORP
  • US7619671B2 patent drawing
  • US7619671B2 patent drawing
  • US7619671B2 patent drawing

AI summary

A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST<sub2>—</sub2>LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.