Charge Retention Node Memory Cell Layout for Crosstalk Reduction
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Solution Overview
Problem
Existing memory devices face limitations in improving operation speed and high integration due to crosstalk issues when combining multiple transistors.
Innovation Solution
A semiconductor device is designed with a charge retention node between the channel region and the gate electrode, minimizing crosstalk by incorporating read and write transistors with specific source/drain and gate electrode configurations, and utilizing a 2T0C memory structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If multiple transistors are combined to improve operation speed, then operation speed is improved, but crosstalk increases
Solution Approach 1:
The patent introduces a charge retention node that segments the electrical path between adjacent transistors. This node acts as an isolation point that divides the continuous conductive path into separate segments, preventing signal interference while maintaining the high-speed operation capability of the multi-transistor configuration.
Solution Approach 2:
The charge retention node serves as an intermediary element between adjacent transistors. It mediates the electrical interaction by providing a controlled interface that allows necessary signal transmission while blocking unwanted crosstalk, thus enabling dense transistor integration without harmful interference.
2Quantity of substance
If multiple transistors are combined to achieve high integration, then integration density is improved, but crosstalk increases
Solution Approach 1:
By introducing charge retention nodes at strategic positions between transistors, the patent segments the electrical domains to prevent crosstalk propagation. This segmentation allows for higher integration density as transistors can be placed closer together without suffering from mutual interference.
Solution Approach 2:
The charge retention nodes provide localized electrical isolation with specific properties tailored for crosstalk suppression. This local quality enhancement allows adjacent transistors to operate independently while maintaining overall high integration density in the memory device.
Data Source
AI summary
A semiconductor device may include first and second transistors on a substrate. The first transistor may include first and second source/drain regions; a first channel region between the first and second source/drain regions; a first gate electrode over the first channel region; and a charge retention node between the first channel region and the first gate electrode. The second transistor may include third and fourth source/drain regions, a portion of the third source/drain region being connected to the charge retention node; a second channel region between the third and fourth source/drain regions; and a second gate electrode over the second channel region.