Charge Pump Over-Sampling ADC for Word-Line Leakage Detection
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Solution Overview
Problem
Defects such as word-line leakage and broken word-lines in non-volatile solid-state memory devices can lead to faulty memory operations, especially as device sizes scale down, making it challenging to detect these defects effectively during the manufacturing process and operational life.
Innovation Solution
A method and circuitry system that utilizes a charge pump system with regulation circuitry to determine the current drawn by components, allowing for the detection of word-line leakage and broken word-lines by varying the frequency of an oscillator and comparing the number of cycles to a reference value, enabling on-chip detection and calibration for accurate leakage determination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If device size is scaled down to increase memory capacity, then storage density is improved, but detection of word-line leakage and broken word-lines becomes more difficult
Solution Approach 1:
The memory device includes on-chip detection circuitry that enables the device to self-diagnose defects during manufacturing and operational life. The detection circuit measures word-line leakage current and broken word-line conditions internally without requiring external test equipment, allowing the system to service its own detection needs while maintaining high density
Solution Approach 2:
An intermediary detection circuit is introduced between the word-lines and ground to measure leakage current. This circuit includes measurement circuitry coupled to a plurality of word-lines and configured to measure word-line leakage current, serving as a mediator that enables detection of defects without directly interfering with the high-density memory structure
2Ease of manufacture
If conventional detection methods are used, then manufacturing process is simple, but detection accuracy for word-line defects is insufficient
Solution Approach 1:
Conventional external mechanical test equipment is replaced with integrated electronic detection circuitry on the chip. The measurement circuitry uses electronic signals to measure word-line leakage current and detect broken word-lines, providing higher precision while maintaining ease of manufacture through standard semiconductor fabrication processes
Solution Approach 2:
The detection circuit provides feedback about word-line leakage and broken word-line conditions to enable real-time monitoring and calibration. The system includes calibration circuitry that allows adjustment of detection thresholds based on measured conditions, improving measurement precision through iterative feedback and adjustment
3Measurement precision
If external test equipment is used for detection, then detection capability is adequate, but in-field detection capability is lost
Solution Approach 1:
The detection circuitry is designed to perform multiple functions: it can detect word-line leakage during manufacturing, monitor defects during operational life, and operate in various field conditions without external equipment. The circuit measures leakage current, detects broken word-lines, and provides calibration capabilities, making it universally applicable across different detection scenarios and environments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient detection of word-line leakage and broken word-lines, reducing the risk of faulty memory operations and data corruption, and allows for in-field detection without the need for external test equipment, improving the reliability of memory devices.
Implementation Method 1
supplying the component from a charge pump system, where the charge pump system includes a charge pump
Implementation Method 2
regulation circuitry, connected to receive the output of the charge pump and regulate the charge pump by varying the frequency of an oscillator supplied to the charge pump
Data Source
AI summary
Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory.