Charge Pump Control Circuitry for Flash Memory Continuous Operations
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Solution Overview
Problem
Conventional charge pump driving methods in flash memory devices are inefficient during continuous operations, leading to unnecessary current consumption and recovery operations.
Innovation Solution
A semiconductor memory device with a command interface that interprets commands to determine continuous operations, generating flag signals to control the charge pump, thereby optimizing voltage generation and reducing unnecessary recovery and pumping operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the charge pump is recovered after each operation section in conventional flash memory devices, then the charge pump can be prepared for the next operation, but unnecessary recovery and pumping operations are performed during continuous operations, leading to increased current consumption and reduced operation efficiency
Solution Approach 1:
The charge pump control system dynamically adjusts its operation mode based on the operation type. For continuous operations, the system detects the continuous operation command and maintains the charge pump in a pumped state without unnecessary recovery, thereby reducing current consumption while ensuring readiness for subsequent operations.
Solution Approach 2:
The invention maintains the charge pump's useful pumping action continuously during consecutive operation sections. By detecting continuous operation commands, the system prevents interruption of the pumping action, allowing the charge pump to remain in a productive state and avoid the energy-wasting cycle of recovery and re-pumping.
2Reliability
If the charge pump is recovered after each operation section, then the system ensures proper voltage levels for subsequent operations, but the operation speed is reduced due to unnecessary recovery and pumping cycles
Solution Approach 1:
The control system dynamically adjusts the charge pump's operational state based on real-time operation detection. When continuous operation commands are detected, the system maintains the pumped state across operation sections, thereby increasing operation speed while ensuring voltage stability is maintained only when necessary.
Solution Approach 2:
The invention eliminates unnecessary interruptions in the charge pump's useful action during continuous operations. By maintaining continuous pumping action, the system accelerates operation execution speed while preserving voltage level stability through intelligent control rather than mandatory recovery cycles.
3Reliability
If the charge pump performs recovery operations between consecutive operation sections, then the system ensures proper preparation for next operations, but unnecessary pumping operations are performed when the charge pump is already at the required voltage level
Solution Approach 1:
The control system dynamically determines whether recovery operations are necessary based on the detected operation type. For continuous operations, the system skips redundant recovery steps when the charge pump remains in a pumped state, thereby improving operation efficiency while maintaining adequate preparation for subsequent operations.
Solution Approach 2:
The invention maintains the charge pump's useful pumped state continuously during consecutive operations, eliminating redundant recovery and pumping cycles. This approach maximizes operation efficiency by keeping the charge pump in a productive state while ensuring proper preparation is maintained through intelligent command detection and control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces current consumption and increases operation speed by eliminating unnecessary charge pump recoveries and pumping operations, enhancing the efficiency of continuous operations in flash memory devices.
Implementation Method 1
The flash memory device programs or erases data with respect to a cell transistor using an F-N (Fowler-Nordheim) tunneling mechanism, which uses a higher voltage, for example, 20V, than the power voltage. Also, when a reading operation is performed, a voltage of about 5V-8V may be used
Implementation Method 2
The command interface is further configured to interpret the received command and to determine if the received command is a continuous operation command
Data Source
AI summary
A semiconductor device includes a memory cell array and a command interface that is configured to receive a command from outside of the semiconductor memory device. The command interface is further configured to interpret the received command and to determine if the received command is a continuous operation command. The command interface outputs a command signal corresponding to the command and at least one flag signal that indicates a continuous operation section if the command is a continuous operation command. A control unit is configured to receive the command signal and the at least one flag signal output from the command interface, and to generate a pump control signal based on the received command signal and the at least one flag signal. A charge pump is configured to generate a voltage in response to the pump control signal for use in accessing the memory cell array to read write and/or erase data.