Charge Pump Control Circuit for Semiconductor Memory Standby Power Optimization
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Solution Overview
Problem
Nonvolatile semiconductor memory devices, such as MROM and EPROM, face challenges in easily performing erase or write operations, requiring cumbersome external programming apparatuses, whereas EEPROMs can perform these operations electrically but lack efficient control over standby mode durations, leading to potential power consumption issues.
Innovation Solution
A semiconductor memory device incorporating a charge pump circuit and a charge pump control circuit that manages a standby mode with adjustable time periods based on default and test mode settings, using a comparator and timer to maintain high voltage levels and reduce current consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the charge pump circuit operates in standby mode with extended time period, then power consumption is reduced, but the high voltage signal may drop below required levels affecting memory core operation
Solution Approach 1:
The charge pump control circuit dynamically adjusts the standby mode time period based on measured operation times. The system measures the actual time required for the charge pump to reach operational voltage levels and uses this information to optimize standby duration, making the system adaptive rather than static. This resolves the contradiction by allowing extended standby periods when safe, while preventing them when they would compromise voltage levels.
Solution Approach 2:
The system implements a feedback mechanism where the charge pump control circuit measures the operation time of the charge pump circuit and uses this measured value to control subsequent standby mode durations. This closed-loop feedback ensures that standby periods are optimized based on actual performance characteristics, preventing both excessive power consumption and insufficient voltage recovery time.
2Loss of energy
If the standby mode time period is extended to reduce power consumption, then energy efficiency improves, but the response time for resuming normal operation increases
Solution Approach 1:
The standby mode time period is made dynamic rather than fixed. The control circuit measures the actual operation time required for the charge pump to reach functional voltage levels and adjusts the standby duration accordingly. This allows the system to minimize standby time when quick resumption is needed while maximizing it when power savings are prioritized, resolving the time-energy tradeoff.
Solution Approach 2:
The system changes the time parameter of standby mode based on measured operational characteristics. By measuring the charge pump's operation time and using this value to control standby duration, the system optimizes the balance between power consumption and response time, adapting the time parameter to actual system needs rather than using a fixed conservative value.
3Reliability
If the charge pump circuit maintains high voltage continuously, then memory core operation is ensured, but power consumption increases
Solution Approach 1:
Instead of maintaining high voltage continuously, the charge pump circuit operates in periodic cycles of active operation and standby mode. The control circuit manages periodic activation based on measured operation times, allowing the system to maintain reliability through regular voltage restoration while reducing overall power consumption during standby intervals. This periodic action resolves the contradiction between continuous operation and energy savings.
Solution Approach 2:
The system ensures continuous useful action by measuring the charge pump operation time and using this information to optimize when the charge pump should be active versus in standby. The measured operation time value guides the control of standby mode, ensuring that the charge pump is activated just in time to maintain necessary voltage levels while minimizing unnecessary operation, thus maintaining continuity of useful function with reduced energy loss.
Data Source
AI summary
A semiconductor memory device includes a memory core; a charge pump circuit providing a high voltage to the memory core; and a charge pump control circuit operating the charge pump circuit by a standby mode and measuring an operation time value of the standby mode. The charge pump control circuit controls the standby mode of the charge pump circuit using the time value.