Charge Pump Coordination in Multi-Die Memory for Peak Current Reduction

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Solution Overview

Problem

In semiconductor memory devices with multiple memory dies stacked on a substrate, the simultaneous operation of charge pumps leads to high peak current consumption due to increased power usage, which is inefficient and can cause power supply instability.

Innovation Solution

Implementing a first pump managing circuit on one memory die to control and coordinate the operation of charge pump circuits across multiple memory dies, using operation state information to generate control signals that adjust the frequency and timing of charge pumping operations, thereby reducing peak current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If multiple charge pump circuits are driven simultaneously in multi-memory die structures, then memory operation speed is improved, but peak current consumption increases

Engineering Contradiction:
Improvememory operation speedVSAvoidpeak current consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent implements a pump managing circuit that controls charge pump circuits to operate in alternating periodic phases rather than simultaneously. The managing circuit generates control signals that enable charge pump circuits in different memory dies at different time intervals, achieving both fast memory operation and reduced peak current consumption through time-division multiplexing of the charge pumping function.

Inventive Principle:
Principle #19Periodic action

2Power

If multiple charge pump circuits operate simultaneously, then voltage generation capability is improved, but power supply stability deteriorates

Engineering Contradiction:
Improvevoltage generation capabilityVSAvoidpower supply stability
Core Design Contradiction:
PowerVSStability of the object's composition

Solution Approach 1:

The patent divides the simultaneous operation of multiple charge pump circuits into segmented phases by implementing a pump managing circuit. This managing circuit segments the charge pumping operations across different time periods, controlling each charge pump circuit in separate memory dies to operate sequentially rather than simultaneously, thereby maintaining voltage generation capability while stabilizing power supply.

Inventive Principle:
Principle #1Segmentation

3Use of energy by moving object

If charge pump circuits are driven sporadically, then peak current is reduced, but memory operation efficiency decreases

Engineering Contradiction:
Improvepeak currentVSAvoidmemory operation efficiency
Core Design Contradiction:
Use of energy by moving objectVSProductivity

Solution Approach 1:

The patent implements a dynamic control mechanism through the pump managing circuit that adaptively adjusts the operation timing of charge pump circuits based on real-time memory access requirements. The managing circuit dynamically generates control signals to enable charge pump circuits in different memory dies at optimal time intervals, ensuring both reduced peak current and maintained high memory operation efficiency through responsive time-division control.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9990979B2Semiconductor memory device capable of reducing peak current with respect to external power in multi-memory die structures
Publication Date: 2018.06.05 SAMSUNG ELECTRONICS CO LTD
  • US9990979B2 patent drawing
  • US9990979B2 patent drawing
  • US9990979B2 patent drawing

AI summary

A semiconductor memory device is disclosed that can differentially control a driving ability and current consumption of the charge pump circuit according to operation state information of other memory die. The semiconductor memory device includes a plurality of charge pump circuits installed on a plurality of memory dies, and a pump managing circuit installed on each of the memory dies to control the charge pump circuits and receive operation state information with respect to other memory die to generate control signals for controlling the charge pump circuits on its own memory die.