Charge Pump Boost Voltage for Memory Read Speed
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Solution Overview
Problem
Low power supply in memory devices leads to degradation in speed and accuracy of read operations, necessitating a method to improve performance without increasing power consumption.
Innovation Solution
A memory device and method that generate and supply a boost voltage to the sensing power supply line during read operations using a charge pump and switches, controlled by an enable signal generated from logic operations on input signals, to enhance the performance of read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If low power supply is used in memory device, then power consumption is reduced, but speed and accuracy of read operation deteriorate
Solution Approach 1:
The power supply is segmented into two paths: a main power supply path for general operation and a sensing power supply line for read operations. The charge pump generates a boost voltage specifically for the sensing power supply line, allowing read operations to receive enhanced power while the overall device maintains low power consumption.
Solution Approach 2:
The voltage parameter on the sensing power supply line is dynamically changed by applying a boost voltage generated by the charge pump during read operations. This temporary parameter enhancement improves read speed and accuracy without permanently increasing the device's power consumption characteristics.
2Reliability
If boost voltage is supplied to sensing power supply line, then read operation speed and accuracy are improved, but device complexity increases
Solution Approach 1:
The charge pump circuit is designed to serve multiple functions: it can generate boost voltage for read operations and also function as a power-on-reset circuit. This multi-functionality reduces the need for separate dedicated circuits, thereby minimizing the increase in device complexity while still providing the necessary performance enhancement.
Solution Approach 2:
The charge pump is configured to automatically activate when a read operation is initiated, generating the boost voltage on-demand without requiring external control. The circuit self-regulates the boost voltage supply based on the operational state, reducing the need for additional control logic and simplifying the overall system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The boost voltage significantly improves the speed and accuracy of read operations, particularly in low-power conditions, while maintaining low power consumption and reducing manufacturing costs by utilizing the charge pump for both write and read operations.
Implementation Method 1
The charge pump is coupled to the logic circuit and is configured to generate a boost voltage according to the enable signal
Data Source
AI summary
A memory device and a method of assisting a read operation in the memory device are introduced. The memory device may include a logic circuit, a charge pump, a switch and a sense amplifier. The logic circuit is configured to receive at least one input signal and perform a logic operation on the at least one input signal to output an enable signal. The charge pump is coupled to the logic circuit and is configured to generate a boost voltage according to the enable signal. The switch is coupled between the charge pump and a sensing power supply line, and is configured to control an electrical connection between the charge pump and the sensing power supply line according to the enable signal to supply the boost voltage to the sensing power supply line. The sense amplifier is configured to perform a read operation using the boost voltage from the sensing power supply line.