Charge Pump Circuit Segmentation for High Voltage Generation

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Solution Overview

Problem

High voltage-endurance electric devices are costly and inefficient in charge pumps, which require high voltage outputs for applications like crystal display panels, as they need to handle voltages several times higher than the input voltage.

Innovation Solution

A charge pump circuit with multiple boosting stages, each comprising capacitors and switch circuits controlled by clock signals, which incrementally increase output voltage without requiring high voltage-endurance devices by using P-type and N-type MOSFETs and capacitors with voltage across them limited to below 5V, allowing for efficient high voltage generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If high voltage-endurance electric devices are used to achieve high voltage output, then the output voltage can reach several times higher than input voltage, but the cost increases significantly

Engineering Contradiction:
Improveoutput voltageVSAvoidcost
Core Design Contradiction:
PowerVSEase of manufacture

Solution Approach 1:

The charge pump circuit is divided into multiple boosting stages, where each stage includes capacitors and switch circuits that operate at lower voltage levels. By segmenting the voltage boosting process into incremental steps rather than requiring a single high-voltage component, the system achieves high output voltage without needing expensive high voltage-endurance devices in each component.

Inventive Principle:
Principle #1Segmentation

2Power

If high voltage-endurance electric devices are used to handle voltages several times higher than input voltage, then the high voltage output is achieved, but the efficiency decreases

Engineering Contradiction:
Improveoutput voltageVSAvoidefficiency
Core Design Contradiction:
PowerVSProductivity

Solution Approach 1:

The patent changes the operating parameters of the electric devices by ensuring that capacitors and switches operate within voltage ranges below 5V during charging and switching operations. By controlling the voltage parameters across components to remain low despite high output voltage, the efficiency is maintained as devices operate in their optimal performance ranges rather than being stressed beyond their efficient operating zones.

Inventive Principle:
Principle #35Parameter changes

3Power

If conventional charge pump design is used with high voltage output requirements, then high voltage is achieved but high voltage-endurance devices are required throughout the circuit

Engineering Contradiction:
Improveoutput voltageVSAvoidvoltage-endurance requirements
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent introduces intermediate voltage levels through multiple boosting stages, where each stage acts as an intermediary step in the voltage transformation process. Capacitors and switch circuits serve as intermediary components that handle only the voltage differential for that specific stage (kept below 5V), rather than requiring all components to handle the full high output voltage. This intermediary approach simplifies the voltage-endurance requirements across the circuit.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the generation of high output voltages while minimizing the need for high voltage-endurance devices, reducing costs and maintaining efficiency by ensuring the switches and capacitors operate within safe voltage limits, thus effectively addressing the high voltage-endurance challenge.

Implementation Method 1

The boosting circuit includes a first capacitor C1, a second capacitor C2... The high voltage is outputted through charging and discharging of the capacitors

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

metal oxide semiconductor field effect transistors (MOSFET)... The first switch circuit is controlled by a first clock signal to couple the second terminal of the first capacitor

Methodology Applied
Scientific EffectMetal oxide semiconductor field effect:

Data Source

PatentUS9917509B2Charge pump circuit outputting high voltage without high voltage-endurance electric devices
Publication Date: 2018.03.13 HIMAX TECH LTD
  • US9917509B2 patent drawing
  • US9917509B2 patent drawing
  • US9917509B2 patent drawing

AI summary

The charge pump circuit includes multiple boosting stages, and each stage includes following units. A first switch circuit is controlled by a first clock signal to couple a second terminal of a first capacitor to a first input terminal or a second input terminal. A third switch circuit is controlled by a second clock signal to couple a second terminal of a second capacitor to the first input terminal or the second input terminal. A second switch circuit is controlled by electric potentials on the second capacitor to couple a first terminal of the first capacitor to the first input terminal or an output terminal. The fourth switch circuit is controlled by electric potentials on the first capacitor to couple a first terminal of the second capacitor to the first input terminal or the output terminal.