Charge Pump Skip for Fast Single-Level Cell Memory Programming
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current non-volatile memory apparatuses face challenges in reading and programming data at faster speeds while maintaining data integrity, primarily due to the time-consuming charge pump setting and resetting processes during programming operations.
Innovation Solution
A memory apparatus and method that includes memory cells connected to word lines in strings, with a charge pump configured to ramp up and down in program voltage, and a control means to successively apply pulses of program voltage, skipping the pump setting and resetting processes between each pulse to optimize programming efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the charge pump setting and resetting processes are performed during programming operations, then data integrity is maintained, but programming speed is reduced
Solution Approach 1:
The charge pump is pre-configured to the required program voltage level before the programming operation begins. This preliminary setup eliminates the need for time-consuming voltage ramping during the actual programming process, thereby maintaining data integrity while significantly improving programming speed.
Solution Approach 2:
The patent skips the charge pump setting and resetting processes between consecutive programming pulses by maintaining the charge pump at the required voltage level throughout the programming sequence. This rushing through of unnecessary steps accelerates programming speed while verification mechanisms ensure data integrity is maintained.
2Manufacturing precision
If the charge pump ramps up and down in program voltage during each programming pulse, then precise voltage control is achieved, but effective program time is reduced
Solution Approach 1:
The charge pump reaches the required program voltage level in advance before programming pulses are applied to the memory cells. This preliminary voltage establishment ensures precise voltage control for reliable programming while eliminating repeated ramping cycles that would reduce effective program time.
Solution Approach 2:
The charge pump maintains a continuous program voltage level throughout the programming sequence without unnecessary ramping up and down between pulses. This continuous voltage supply maximizes the duration of useful programming action while verification steps ensure voltage precision is maintained.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances programming speed by reducing the time spent on charge pump operations, improving effective program time by over 25% and maintaining data integrity by efficiently managing voltage pulses.
Implementation Method 1
a charge pump configured to ramp up to a program voltage in a pump setting process and supply the program voltage to the plurality of word lines during a program operation and ramp down from the program voltage in a pump resetting process
Data Source
AI summary
A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to word lines and disposed in strings and configured to retain a threshold voltage. The memory apparatus also includes a charge pump configured to ramp up to a program voltage in a pump setting process and supply the program voltage to the word lines during a program operation and ramp down from the program voltage in a pump resetting process. A control means is configured to successively apply one of a series of pulses of the program voltage from the charge pump to each selected one of the word lines to program the memory cells during the program operation. The control means is also configured to skip the pump setting process and the pump resetting process of the charge pump in between each of the series of pulses of the program voltage.