Charge Pump Circuit Latch-Up Prevention
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Solution Overview
Problem
Conventional charge pump circuits face activation issues due to parasitic transistors, which often require the use of external Schottky diodes to prevent latch-up operations, increasing component count and cost.
Innovation Solution
A charge pump circuit design that includes voltage control units to block output signals during boosting times, using transistors with varying resistance states to manage voltage outputs and prevent latch-up without external Schottky diodes, thereby reducing peak current and component count.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external Schottky diodes are used to prevent latch-up operations, then reliability is improved, but device complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the external Schottky diode component from the circuit by integrating its protective function directly into the charge pump circuit structure. The latch-up prevention is achieved through internal voltage control mechanisms rather than external protective components, thereby reducing device complexity while maintaining reliability.
Solution Approach 2:
The patent merges the voltage regulation function and latch-up prevention function into a unified circuit structure. The voltage control units simultaneously perform voltage boosting and parasitic transistor suppression, combining multiple functions into integrated circuit blocks rather than separate components.
2Productivity
If voltage boosting is performed rapidly, then productivity is improved, but harmful factors increase due to parasitic transistor activation
Solution Approach 1:
The patent applies preliminary anti-action by implementing voltage control units that preemptively suppress parasitic transistor activation before latch-up can occur. The control units monitor and regulate voltages during the boosting process, preventing the conditions that would trigger parasitic transistors rather than reacting after activation occurs.
Solution Approach 2:
The patent employs dynamic voltage control mechanisms that adapt the boosting speed and control signals based on real-time circuit conditions. The voltage control units dynamically adjust operating parameters to maintain fast boosting while preventing parasitic transistor activation, making the system behavior adaptive rather than fixed.
Data Source
AI summary
A charge pump circuit and related method are provided. The charge pump circuit includes first, second and third voltage generation units, first and second control units, and a latch-up prevention unit. The first generation unit regulates a first output signal, the second generation unit boosts a second output signal, and the third generation unit boosts a third output signal in response to the first and second output signals. The first control unit is connected between the first generation unit and the third generation unit, and the second control unit is connected between the second generation unit and the third generation unit. The first and second control units block respective outputs of the first and second generation units during the boosting time for the second output signal. The latch-up prevention unit prevents a latch-up operation caused by a parasitic transistor until the third output signal is maintained at a third voltage.