Charge Sharing Capacitor ITO Common Electrodefect Detection

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Solution Overview

Problem

Current LCD technologies face challenges in detecting ITO residue shorts between the charge sharing capacitor's upper electrode plate and pixel electrode, leading to malfunction and increased production costs due to undetected micro spots.

Innovation Solution

A pixel structure with a charge sharing capacitor constructed by an ITO layer upper electrode plate, a metal lower electrode plate, and an insulative layer, where the ITO layer upper electrode plate acts as a common electrode coupled to a common voltage signal line, allowing for easier detection of shorts by appearing as a dark spot when a short occurs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the ITO layer upper electrode plate is used as a common electrode coupled to a common voltage signal line, then the detection rate of shorts between the ITO layer upper electrode plate and pixel electrode is improved, but the device complexity increases due to additional electrode plate configuration

Engineering Contradiction:
Improvedetection rate of shortsVSAvoidelectrode plate configuration
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The ITO layer upper electrode plate is configured to serve dual functions: as an electrode plate for the charge sharing capacitor and as a common electrode coupled to a common voltage signal line. This multi-functionality allows the same structure to be used for both capacitance function and common voltage reference, enabling defect detection without adding separate components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The charge sharing capacitor structure itself provides the common electrode function through its ITO layer upper electrode plate. The structure serves its own detection needs by using its own components (the ITO layer upper electrode plate) as the common electrode, eliminating the need for external detection infrastructure.

Inventive Principle:
Principle #25Self-service

2Measurement precision

If the charge sharing capacitor is constructed with an ITO layer upper electrode plate and metal lower electrode plate, then the detection of ITO residue shorts is improved, but the manufacturing precision requirements increase due to layer alignment

Engineering Contradiction:
Improvedetection of ITO residue shortsVSAvoidlayer alignment
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The ITO layer upper electrode plate serves multiple purposes: as the upper electrode of the charge sharing capacitor, as the common electrode for voltage reference, and as a detectable structure for identifying ITO residue shorts. This multi-functionality consolidates what would otherwise require separate structures, reducing the number of alignment interfaces needed.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Measurement precision

If the ITO layer upper electrode plate is coupled to the common voltage signal line, then the defect detection capability is improved, but the ease of manufacture decreases due to additional coupling requirements

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidcoupling implementation
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The common electrode function is merged with the ITO layer upper electrode plate of the charge sharing capacitor. By combining these functions into a single structure, the patent eliminates the need for separate common electrode structures and their associated coupling processes, thereby improving ease of manufacture while maintaining defect detection capability.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9523899B2Pixel structure and detection method of promoting defect detection rate
Publication Date: 2016.12.20 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US9523899B2 patent drawing
  • US9523899B2 patent drawing
  • US9523899B2 patent drawing

AI summary

The present invention provides a pixel structure and a detection method of promoting defect detection rate. The pixel structure of promoting defect detection rate comprises two areas of a main pixel (10) and a sub pixel (20), and the sub pixel (20) comprises a charge sharing thin film transistor (T3) and a charge sharing capacitor (CST3); a gate of the charge sharing thin film transistor (T3) is electrically coupled to a charge sharing scan line (Gate2(m)); the charge sharing capacitor (CST3) is constructed by an ITO layer upper electrode plate (42), a metal lower electrode plate (2) and an insulative layer (3) sandwiched between the ITO layer upper electrode plate (42) and the metal lower electrode plate (2); the ITO layer upper electrode plate (42) and an ITO pixel electrode (41) are in a same layer, and the ITO layer upper electrode plate (42) is employed as a pixel common electrode coupled to a common voltage signal line (Com(m)), and the metal lower electrode plate (2) is coupled to a drain of the charge sharing thin film transistor (T3).