Charge Storage Layer Structure for Deep Electron Trapping
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Solution Overview
Problem
Conventional charge storage layers in semiconductor memory devices, typically made of silicon nitride films or polysilicon, lack enhanced performance capabilities.
Innovation Solution
A semiconductor device structure featuring a charge storage layer composed of alternating layers of aluminum nitride (AlN), silicon nitride (SiN), and silicon oxide (SiO2) films, with SiN films containing aluminum and oxygen atoms, enhancing electron trap levels and retention characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon nitride film or polysilicon is used as charge storage layer, then the structure is simple, but the electron trap levels are insufficient and charge retention is poor
Solution Approach 1:
The charge storage layer is segmented into multiple sub-layers including AlN layer, SiN layer, and SiO2 layer. Each sub-layer contributes different functionalities: AlN provides deep electron trap levels, SiN offers charge storage capacity, and SiO2 forms a barrier. This segmentation resolves the contradiction by achieving superior charge retention through functional division while maintaining manageable structural complexity.
Solution Approach 2:
The invention uses a composite structure combining aluminum nitride (AlN), silicon nitride (SiN), and silicon oxide (SiO2) in the charge storage layer. This composite material approach leverages the deep electron trap levels of AlN, the charge storage capability of SiN, and the barrier properties of SiO2, thereby achieving enhanced charge retention without excessive structural complexity.
2Reliability
If conventional charge storage layer is used, then the manufacturing process is simple, but write characteristics are insufficient
Solution Approach 1:
The charge storage layer is divided into multiple depositable sub-layers (AlN, SiN, SiO2), each forming a distinct functional unit. This segmentation enables optimized write characteristics through the deep electron trap levels of AlN while keeping the fabrication process manageable through sequential deposition of each layer using standard semiconductor manufacturing techniques.
Solution Approach 2:
The invention changes the material composition parameters of the charge storage layer by incorporating AlN with specific aluminum and nitrogen ratios, combined with SiN and SiO2 layers. This parameter change optimizes write characteristics through controlled electron trap levels while maintaining ease of manufacture through established deposition processes for nitride and oxide films.
3Reliability
If deep electron trap levels are introduced, then charge escape is prevented, but the structure becomes more complex
Solution Approach 1:
The charge storage layer is segmented with AlN as a specific sub-layer dedicated to providing deep electron trap levels for preventing charge escape. This segmentation achieves reliable charge retention while controlling structural complexity by assigning specific functions to each sub-layer, with AlN specifically addressing the charge escape prevention requirement.
Solution Approach 2:
The composite structure of AlN-SiN-SiO2 is designed where AlN specifically provides deep electron trap levels to prevent charge escape, while SiN and SiO2 provide supporting functions. This composite approach achieves charge escape prevention through material composition rather than structural complexity, resolving the contradiction effectively.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves write characteristics and charge retention by introducing deep electron trap levels, preventing charge escape and offering superior performance compared to traditional SiN films.
Implementation Method 1
a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen
Implementation Method 2
The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen
Data Source
AI summary
A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.