Charged Particle Beam Lithography Reticle Pattern Optimization
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Solution Overview
Problem
Conventional optical lithography faces challenges in accurately transferring small features onto substrates due to limitations in resolution and precision, particularly with the addition of complex OPC features which increase mask complexity and computation costs, and EUV lithography requires higher accuracy to mitigate imperfections such as line edge roughness.
Innovation Solution
A method and system for fracturing charged particle beam shots to improve the accuracy and precision of pattern formation on reticles, allowing for overlapping shots and dose modulation to optimize the calculated aerial substrate image, reducing critical dimension variation and edge slope, thereby enhancing the accuracy of pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional optical lithography is used to transfer patterns, then the manufacturing process is simple, but the resolution and precision are insufficient for small features
Solution Approach 1:
The patent replaces conventional optical lithography with charged particle beam lithography (electron beam or ion beam). This substitution enables direct writing of patterns with much higher precision (sub-10nm scale) by using focused charged particle beams instead of optical systems, resolving the contradiction between achieving high manufacturing precision and avoiding increased system complexity.
Solution Approach 2:
The patent changes the fundamental parameter of the lithography system by using charged particles (electrons or ions) instead of photons. This parameter change enables direct pattern writing with variable shaped beams, achieving superior resolution and precision for small features while maintaining processability through computer-controlled beam manipulation.
2Manufacturing precision
If complex OPC features are added to improve pattern accuracy, then the manufacturing precision improves, but the mask complexity and computation costs increase
Solution Approach 1:
The patent extracts and eliminates the need for complex OPC features by using charged particle beam direct writing. Instead of adding corrective features to optical masks, the system directly writes the final high-precision patterns using focused charged particle beams, removing the burden of mask complexity while maintaining or improving pattern accuracy.
Solution Approach 2:
The patent uses computer-aided design (CAD) data to directly generate charged particle beam writing patterns through a fracturing process. This digital copying approach converts design data into precise beam trajectories, eliminating the need for physical OPC features on masks and reducing both mask complexity and computation costs.
3Manufacturing precision
If charged particle beam lithography is used to improve resolution, then the manufacturing precision improves, but the line edge roughness increases
Solution Approach 1:
The patent optimizes charged particle beam parameters including energy, current, and focusing conditions to achieve sharp, well-defined pattern edges. By carefully controlling beam parameters and using appropriate resist materials, the system achieves high resolution with minimal line edge roughness, resolving the contradiction between improved precision and reduced edge quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces critical dimension variation and line edge roughness, improving the precision of pattern transfer and reducing the need for complex OPC features, leading to more efficient and cost-effective mask production while maintaining high accuracy for EUV lithography.
Implementation Method 1
A method and system for exposing a surface with a charged particle beam
Implementation Method 2
exposing a resist-coated surface with a charged particle beam
Data Source
AI summary
A method and system for fracturing or mask data preparation is disclosed in which a plurality of charged particle beam shots is determined which will produce a pattern on a reticle, where the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process. A simulated reticle pattern is then calculated from the plurality of charged particle beam shots. A calculated aerial substrate image is then calculated using the simulated reticle pattern, and a shot in the plurality of shots is modified to improve the calculated aerial substrate image. Similar methods for forming a pattern on a reticle and for manufacturing an integrated circuit are also disclosed.