Semiconductor Radiation Detector With Charged Sidewall Passivation
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Solution Overview
Problem
Semiconductor radiation detectors face challenges in achieving improved radiation detection performance while minimizing physical size, maximizing radiation capture, and reducing leakage currents at the edges.
Innovation Solution
The introduction of a semiconductor radiation detector design that includes an arrangement of one or more layers with a net charge on the semiconductor block's side surfaces, creating an induced junction to repel electrons and reduce leakage currents, thereby allowing for a larger active volume and improved detection performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the physical size of the semiconductor block is reduced, then the device compactness is improved, but the active volume for radiation capture is reduced
Solution Approach 1:
The patent introduces a vertical dimension by depositing charged layers on the side surfaces of the semiconductor block, creating a third dimension for electric field generation. This allows the active volume to be extended vertically through the block thickness without increasing the horizontal footprint, thus capturing more radiation while maintaining compact size.
Solution Approach 2:
The patent changes the electrical parameter distribution by introducing charged layers with specific charge densities on the side surfaces. This creates an induced junction that extends the depletion region vertically through the block, increasing the active volume fraction without changing the physical dimensions of the block.
2Measurement precision
If high potential is applied to field electrodes for improved charge collection, then the detection sensitivity is improved, but leakage current at edges increases
Solution Approach 1:
The patent applies local quality by depositing charged layers specifically on the side surfaces of the semiconductor block, creating a localized electric field that passivates the edge regions. This allows high potential to be applied to the field electrodes for improved charge collection in the active region while the edge regions are locally protected from leakage currents through the induced junction at the sides.
3Measurement precision
If guard electrodes are added to reduce leakage current, then the detection accuracy is improved, but the device complexity increases
Solution Approach 1:
The patent extracts the leakage current protection function from the traditional guard electrode system and implements it through charged layers deposited on the side surfaces. This eliminates the need for additional guard electrodes and their associated wiring and control circuitry, reducing device complexity while maintaining detection accuracy through the induced junction that passivates edge regions.
4Productivity
If the active volume is increased for improved radiation capture, then the detection efficiency is improved, but the physical size of the detector increases
Solution Approach 1:
The patent utilizes the vertical dimension by creating an induced junction through charged layers on the side surfaces, which extends the depletion region through the entire thickness of the block. This allows the active volume to be maximized within the given physical dimensions, improving detection efficiency without increasing the detector's external size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances radiation detection capabilities by reducing leakage currents and enabling a larger active volume for radiation capture, while maintaining or reducing the detector's physical size.
Implementation Method 1
an arrangement of one or more layers having a net charge of the first polarity and arranged to substantially cover at least one side surface of the semiconductor block that connects said front surface to said back surface to induce an electric field for passivating the at least one side surface
Implementation Method 2
the electric field drives signal charges (e.g. electrons) generated in the semiconductor block 101 due to incident radiation to the collector electrode 103
Data Source
Figure 1A~1B
Figure 2~3
Figure 4~5B
AI summary
According to an example embodiment, a semiconductor radiation detector (300, 300', 400a, 400b, 400c, 500a, 500b, 500c) is provided, the semiconductor radiation detector (300, 300', 400a, 400b, 400c, 500a, 500b, 500c) comprising: a semiconductor block (101) of a first conductivity type and comprising majority charge carriers of a first polarity; an electrode arrangement embedded on one or more surfaces of the semiconductor block (101), the electrode arrangement comprising at least one collector electrode (103, 103') embedded on a front surface of the semiconductor block (101) and one or more further electrodes (102, 102') that are arranged to generate an electric field within the semiconductor block (101) for driving charge carriers of the first polarity generated therein due to incident radiation towards the at least one collector electrode (103, 103'); a radiation entrance window for receiving the incident radiation, the radiation entrance window arranged to cover at least portion of a back surface of the semiconductor block (101) that is opposite to its front surface; and an arrangement of one or more layers (108) having a net charge of the first polarity and arranged to substantially cover at least one side surface of the semiconductor block (101) to induce an electric field for passivating the at least one side surface of the semiconductor block (101) so as to reduce leakage currents arising therein.