Chemical Amplification Resist Composition for Ultrafine Pattern Formation
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Solution Overview
Problem
Current chemical amplification resist compositions struggle to form ultrafine patterns with line widths of 50 nm or less while maintaining high sensitivity, resolution, and stability, particularly in microfabrication processes for ultra-LSI and high-capacity microchip production.
Innovation Solution
A chemical amplification resist composition incorporating a triarylsulfonium cation with fluorine atoms, capable of generating an acid with a volume of 240 ų or higher upon irradiation, combined with a phenolic hydroxyl group-containing resin, which enhances acid generation and solubility in alkali developers, improving pattern resolution and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical amplification resist compositions are used, then manufacturing process is simple, but manufacturing precision deteriorates for ultrafine patterns with line widths of 50 nm or less
Solution Approach 1:
The patent employs a composite resist composition system combining multiple specialized components: a specific resin (polyhydroxystyrene derivative), fluorinated triarylsulfonium salt photoacid generator, phenolic hydroxyl group-containing compound, and carboxylic acid compound. This composite approach enables simultaneous achievement of high resolution, sensitivity, and pattern stability for ultrafine patterns with line widths of 50 nm or less, which conventional single-component resists cannot achieve.
Solution Approach 2:
The patent optimizes specific parameters including the volume of acid generated by the photoacid generator (240 ų or higher), the molecular structure of the resin with specific glass transition temperature range (80-120°C), and the concentration ratios of different components. These parameter optimizations enable precise control over pattern formation while maintaining manufacturing feasibility.
2Manufacturing precision
If exposure wavelength is shortened to form ultrafine patterns, then manufacturing precision improves, but sensitivity deteriorates
Solution Approach 1:
The resist composition uses a composite photoacid generator system with fluorinated triarylsulfonium salts that exhibit high quantum efficiency for extreme ultraviolet light absorption. The combination of this photoacid generator with the specific resin and phenolic hydroxyl group-containing compound creates a synergistic effect that maintains high sensitivity even at shorter exposure wavelengths required for ultrafine pattern formation.
Solution Approach 2:
The patent specifies that the photoacid generator must generate acid with a volume of 240 ų or higher, and the resin glass transition temperature is controlled within 80-120°C. These parameter optimizations ensure that sufficient acid is generated at extreme ultraviolet wavelengths to maintain sensitivity while achieving the required pattern resolution.
3Quantity of substance
If acid generation volume is increased to improve sensitivity, then sensitivity improves, but line edge roughness increases
Solution Approach 1:
The patent precisely controls the acid generation volume parameter at 240 ų or higher, which is the minimum threshold needed to achieve high sensitivity. Combined with the specific resin glass transition temperature control (80-120°C) and the presence of phenolic hydroxyl group-containing compounds, this parameter optimization ensures sufficient acid generation while maintaining smooth line edges through controlled acid diffusion and uniform polymer collapse.
Solution Approach 2:
The phenolic hydroxyl group-containing compound localizes acid neutralization activity at specific sites within the resist film, creating localized regions of controlled acid concentration. This local quality control prevents excessive acid diffusion that would cause line edge roughness, while still maintaining overall high sensitivity through sufficient total acid generation.
Data Source
AI summary
A chemical amplification resist composition according to the present invention includes (A) a compound including a triarylsulfonium cation having one or more fluorine atoms and capable of generating an acid with a volume of 240 Å3 or higher by irradiation of active rays or radiation; and (B) a compound including a phenolic hydroxyl group.