Chemical Sensor Sidewall Spacer Sensing Surface

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Solution Overview

Problem

Large-scale chemical sensor arrays face noise susceptibility issues due to reduced sensing surface area, leading to decreased signal-to-noise ratio and accuracy in detecting chemical and biological processes.

Innovation Solution

The chemical sensors incorporate a floating gate conductor with a dielectric material opening and a conductive sidewall spacer, extending the sensing surface vertically to maintain a small footprint while increasing the sensing surface area, thereby reducing noise and enhancing signal accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If large-scale chemical sensor arrays are used to detect chemical processes, then the detection capability and measurement coverage are improved, but the susceptibility to noise increases and signal-to-noise ratio deteriorates

Engineering Contradiction:
Improvedetection capabilityVSAvoidsignal-to-noise ratio
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent extends the sensing surface from a two-dimensional planar area to a three-dimensional structure by adding vertical sidewall spacers. This dimensional transition allows the sensor to maintain a small footprint while increasing the effective sensing surface area, thereby improving signal-to-noise ratio without sacrificing detection capability in large-scale arrays

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If the sensing surface area is increased to reduce noise, then the signal-to-noise ratio is improved, but the device footprint increases

Engineering Contradiction:
Improvesignal-to-noise ratioVSAvoiddevice footprint
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The invention utilizes the vertical dimension by forming sidewall spacers that extend upward from the substrate. This allows the sensing surface area to be increased without expanding the lateral footprint of the device, effectively decoupling the relationship between sensing area and device area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The sidewall spacers are formed within the vertical profile of the sensor structure, nesting the extended sensing surface within the existing device boundaries. This nested configuration allows additional sensing area to be incorporated without increasing the overall device footprint

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design allows for high-density arrays with low noise chemical sensors, accurately detecting reaction characteristics by maintaining a large sensing surface area despite reduced footprint, improving signal-to-noise ratio and overall accuracy.

Implementation Method 1

The operation of the chemFET is based on the modulation of channel conductance, caused by changes in charge at the sensitive area due to a chemical reaction occurring nearby

Methodology Applied
Scientific EffectField effect transistor operation: Electric Field

Implementation Method 2

The presence of ions in an analyte solution alters the surface potential at the interface between the ion-sensitive layer and the analyte solution, due to the protonation or deprotonation of surface charge groups caused by the ions present in the analyte solution

Methodology Applied
Scientific EffectIon-sensitive field effect: Electric Field

Data Source

PatentUS9995708B2Chemical sensor with sidewall spacer sensor surface
Publication Date: 2018.06.12 LIFE TECHNOLOGIES CORP
  • US9995708B2 patent drawing
  • US9995708B2 patent drawing
  • US9995708B2 patent drawing

AI summary

In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.