Chemically Amplified Resist Composition for High Resolution Lithography
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Solution Overview
Problem
Current chemically amplified resist compositions for semiconductor microfabrication fail to produce patterns with high resolution, as they lack the necessary acid-labile groups and solubility in alkali aqueous solutions, affecting pattern formation and etching resistance.
Innovation Solution
A chemically amplified resist composition is developed, comprising a resin with acid-labile groups and a specific salt structure that becomes soluble in alkali solutions upon acid action, enhancing pattern resolution and etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified resist composition is used, then the lithography process can be performed, but the pattern resolution is insufficient
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by introducing specific acid-labile groups (tert-butyl ester, isobornyl ester, cyclohexenyl ester) and fluorinated salt structures. These parameter changes enable the resin to undergo controlled solubility changes upon acid generation, improving pattern resolution while maintaining etching resistance through the synergistic interaction of the modified functional groups
Solution Approach 2:
The patent creates a composite resist system combining the modified resin (containing acid-labile groups) with the fluorinated salt (formula II). This composite material approach allows the resin to provide structural integrity and etching resistance while the acid-labile groups enable high-resolution patterning through controlled solubility changes in the developer solution
2Manufacturing precision
If the resin contains acid-labile groups and becomes soluble in alkali solution by acid action, then pattern resolution improves, but the etching resistance may be compromised
Solution Approach 1:
The patent applies local quality by placing acid-labile groups at specific positions within the resin structure. These groups are strategically positioned to undergo acid-catalyzed cleavage only in the exposed regions, creating local solubility differences that define pattern resolution while the rest of the resin structure maintains its etching resistance properties
3Manufacturing precision
If the resin structure is modified to enhance solubility in alkali solutions, then pattern formation improves, but the overall composition complexity increases
Solution Approach 1:
The patent simplifies the composition complexity by making targeted parameter changes to the resin structure - specifically incorporating acid-labile groups with well-defined chemical structures (tert-butyl ester, isobornyl ester, cyclohexenyl ester). These specific structural modifications provide predictable solubility changes without requiring complex multi-component systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved pattern resolution and etching resistance, suitable for advanced lithography processes like ArF excimer laser lithography, by incorporating specific structural units and a salt that facilitates solubility in alkali solutions.
Implementation Method 1
a chemically amplified resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation
Implementation Method 2
which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid
Data Source
AI summary
The present invention provides a chemically amplified resist composition comprising a resin which comprises a structural unit having an acid-labile group and a structural unit represented by the formula (I):wherein R1 represents a hydrogen atom or a methyl group, ring X represents a C3-C30 cyclic hydrocarbon group in which one —CH2— is substituted with —COO—, and at least one hydrogen atom in the C3-C30 cyclic hydrocarbon group may be substituted, and p represents an integer of 1 to 4, and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, anda salt represented by the formula (II):wherein Y1 and Y2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, A+ represents an organic counter ion, and R21 represents a C1-C30 hydrocarbon group which may be substituted and at least one —CH2— in the C1-C30 hydrocarbon group may be substituted with —CO— or —O—.