Chemically Amplified Resist Material for EUV Lithography
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Solution Overview
Problem
Current EUV lithography technologies face challenges due to low power EUV light sources, requiring long exposure times and high maintenance costs, and similar issues exist with other lithography methods like electron beam and ion beam, necessitating improved sensitivity of resist materials to reduce pulse numbers and costs.
Innovation Solution
A chemically amplified resist material using a two-step exposure process with specific radiation-sensitive agents and a compound represented by formula (A), allowing for patternwise and floodwise exposure to ionizing and nonionizing radiation, generating acids and sensitizers only in exposed regions, thereby improving sensitivity and lithographic characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If the sensitivity of resist material is improved to overcome low power of EUV light sources, then exposure time can be reduced, but the lithography characteristics may deteriorate
Solution Approach 1:
The exposure process is divided into two distinct steps: patternwise exposure to first radiation (wavelength ≤400 nm) that generates acid and initiates chemical amplification, followed by floodwise exposure to second radiation (wavelength >400 nm) that activates the sensitizer for complete reaction. This segmentation allows optimization of each step for different functions, achieving both high sensitivity and superior lithography characteristics
Solution Approach 2:
A radiation-sensitive sensitizer is introduced as an intermediary component that absorbs second radiation and facilitates the chemical reaction. The sensitizer acts as a mediator between the two radiation types, enabling the floodwise exposure to effectively amplify the pattern formed during patternwise exposure, thereby improving sensitivity without compromising lithography quality
2Productivity
If high sensitivity is achieved to reduce pulse number, then maintenance cost can be reduced, but the complexity of resist material increases
Solution Approach 1:
The resist material utilizes parameter changes in the form of wavelength-dependent radiation sensitivity. The base component responds to first radiation (≤400 nm) by generating acid, while the sensitizer component responds to second radiation (>400 nm). This parameter-based differentiation allows the system to achieve high sensitivity through controlled chemical amplification without requiring overly complex material structures
Solution Approach 2:
The resist material is designed as a composite system containing both a base component and a radiation-sensitive sensitizer component with distinct functions. The base component provides the fundamental pattern formation capability through acid generation, while the sensitizer component enhances sensitivity through secondary radiation absorption and chemical amplification. This composite structure achieves high productivity while managing complexity through functional specialization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high sensitivity and superior lithographic characteristics, allowing for fine pattern formation even with low-power light sources, reducing maintenance costs and exposure times across various lithography techniques.
Implementation Method 1
a radiation-sensitive sensitizer absorbing the second radioactive ray... capable of generating, upon an exposure to the first radioactive ray, an acid
Implementation Method 2
a base component that is capable of being made soluble or insoluble in the developer solution by an action of an acid
Data Source
AI summary
A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).