Chemically Amplified Positive Resist for Stable Fine Patterning

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Solution Overview

Problem

Existing chemically amplified resist compositions face challenges in achieving high resolution, small line edge roughness (LER), pattern profile stability, and etching resistance, particularly in photomask processing, due to acid diffusion and sensitivity issues, which affect throughput and pattern uniformity.

Innovation Solution

A chemically amplified positive resist composition using a polymer containing a repeat unit derived from an onium salt with an aromatic sulfonate anion and a triarylsulfonium cation, along with specific repeat units, to enhance solvent solubility and lithographic performance, including resistance to pattern collapse and etching resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the volume of acid generated from an acid generator is increased to prevent acid diffusion, then resolution is improved, but line edge roughness increases and pattern profile stability deteriorates

Engineering Contradiction:
ImproveresolutionVSAvoidpattern profile stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent introduces a base polymer containing multiple different repeat units (repeat units (1) to (4)) with distinct functions: repeat unit (1) provides acid generation, repeat unit (2) controls acid diffusion, repeat unit (3) enhances solubility, and repeat unit (4) improves etching resistance. This segmentation of functions within the polymer structure allows optimization of each parameter independently, resolving the contradiction between resolution and pattern profile stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent creates a composite polymer structure by copolymerizing multiple monomers with different functionalities. The base polymer combines acid-generating groups, acid diffusion control groups, solubility-enhancing groups, and etching-resistant groups into a single integrated material, achieving synergistic effects that resolve the technical contradiction between high resolution and stable pattern profiles.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If a repeat unit that generates acid by exposure is introduced into the base polymer to control acid diffusion, then line edge roughness is reduced, but solubility in organic solvent deteriorates

Engineering Contradiction:
Improveline edge roughnessVSAvoidsolubility in organic solvent
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent assigns specific local functions to different repeat units within the polymer. Repeat unit (3) is specifically designed with solubility-enhancing groups (such as alkoxy or hydroxyl groups) that are localized to provide good organic solvent solubility, while repeat units (1) and (2) handle acid generation and diffusion control. This local differentiation of properties resolves the contradiction between reducing line edge roughness and maintaining solubility.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If high-energy radiation exposure is used for ultrafine processing, then pattern resolution is improved, but throughput decreases due to sequential writing time

Engineering Contradiction:
Improvepattern resolutionVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent changes the sensitivity parameter of the resist composition by incorporating the base polymer with acid-generating repeat units and acid diffusion control units. This formulation achieves high sensitivity to high-energy radiation, allowing faster exposure times and improved throughput while maintaining ultrafine pattern resolution. The polymer's molecular weight and composition are optimized to enhance radiation response.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves high resolution, reduced LER, stable pattern profiles, and excellent etching resistance, suitable for small-size pattern formation in photolithography using high-energy radiation.

Implementation Method 1

a base polymer (A) containing a polymer adapted to increase its solubility in an alkaline aqueous solution under the action of acid

Methodology Applied
Scientific EffectAcid-catalyzed deprotection: Catalysis

Implementation Method 2

a sulfonium cation having the formula (A1-2)

Methodology Applied
Scientific EffectPhotodissociation: Photodissociation

Data Source

PatentUS20260079400A1Chemically amplified positive resist composition and resist pattern forming process
Publication Date: 2026.03.19 SHIN ETSU CHEMICAL CO LTD
  • US20260079400A1 patent drawing
  • US20260079400A1 patent drawing
  • US20260079400A1 patent drawing

AI summary

A chemically amplified positive resist composition containing a base polymer (A) which is a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid, contains a repeat unit containing an aromatic sulfonate anion having the formula (A1-1) and a sulfonium cation having the formula (A1-2) and a repeat unit having the formula (A2), and contains a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid.