Semiconductor Chip Air Exhaust Passages for Void-Free Bonding

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Solution Overview

Problem

Air trapped between semiconductor substrates and chips during bonding processes weakens adhesive force and reduces productivity due to void formation, which existing technologies have not effectively addressed.

Innovation Solution

Incorporating air exhaust passages with a larger outlet area than inlet area on semiconductor chips and substrates to create a pressure difference, allowing trapped air to be expelled outside the package, thereby enhancing adhesion between the substrate and chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional bonding process is used to mount semiconductor chip on substrate, then bonding process is simple, but air trapped between substrate and chip generates voids that weaken adhesive force and reduce productivity

Engineering Contradiction:
Improveadhesive forceVSAvoidbonding process efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent extracts the harmful trapped air from the bonding interface by introducing air exhaust passages that extend from the bonding interface to the outer surface of the semiconductor chip. These passages provide a dedicated pathway for air to escape during the bonding process, preventing void formation and maintaining strong adhesive force between the substrate and chip.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The air exhaust passages are segmented into multiple distributed channels across the bonding interface area. This segmentation allows air to be exhausted from multiple locations simultaneously, improving air removal efficiency and ensuring uniform bonding across the entire chip-substrate interface.

Inventive Principle:
Principle #1Segmentation

2Reliability

If air exhaust passages are added to remove trapped air, then adhesive force is improved, but device structure becomes more complex

Engineering Contradiction:
Improveadhesive forceVSAvoidchip structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The air exhaust passages are localized to specific regions where air trapping is most problematic, rather than uniformly distributing them across the entire chip. The passages are concentrated at the bonding interface and edge regions, providing targeted air removal while minimizing the overall structural modification and maintaining local bonding quality.

Inventive Principle:
Principle #3Local quality

3Productivity

If air exhaust passages with larger outlet area are used to create pressure difference, then air removal efficiency is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveair removal efficiencyVSAvoidpassage area ratio
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The air exhaust passages are designed with varying cross-sectional areas along their length, with the outlet area at the bonding interface being larger than the inlet area at the outer surface. This parameter change creates a pressure difference that drives air flow during bonding, improving air removal efficiency. The gradual transition in area helps manage manufacturing tolerances while maintaining effective air exhaust functionality.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The air exhaust passages effectively remove trapped air, improving the adhesive force between semiconductor substrates and chips, leading to enhanced productivity and package reliability.

Implementation Method 1

The first passage area of the inlet and the second passage area of the outlet may generate a pressure difference in the air exhaust passages. The air trapped inside the semiconductor package may be exhausted to the outside along the air exhaust passage by the pressure difference.

Methodology Applied
Scientific EffectPressure difference: Pressure Gradient

Data Source

PatentUS20240030083A1Semiconductor package and method of manufacturing the semiconductor package
Publication Date: 2024.01.25 SAMSUNG ELECTRONICS CO LTD
  • US20240030083A1 patent drawing
  • US20240030083A1 patent drawing
  • US20240030083A1 patent drawing

AI summary

A semiconductor package includes a semiconductor substrate and a semiconductor chip in contact with the semiconductor substrate. The semiconductor chip has a first surface facing the semiconductor substrate and an opposite second surface. The semiconductor chip has a die region, an edge region extending around the die region and a plurality of air exhaust passages extending from the die region to an outer surface of the edge region in the first surface of the semiconductor chip. Each of the air exhaust passages includes an inlet having a first passage area, and an outlet having a second passage area greater than the first passage area.