Semiconductor Chip Bonding Structure With Multi-Material Dielectric Layers
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving reliable bonding between semiconductor chips due to limitations in bonding techniques, particularly in forming fine wiring and ensuring strong dielectric-to-dielectric bonding, which affects the overall reliability and performance of the package.
Innovation Solution
A semiconductor package design that incorporates asymmetrical bonding structures with insulating bonding layers made of different materials, such as silicon oxide, silicon nitride, and silicon oxycarbonitride, and varying deposition temperatures to enhance bonding strength and reduce thermal history, thereby improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional bonding techniques are used to form fine wiring and bond semiconductor chips, then the bonding process can be simplified, but the bonding strength and reliability are insufficient
Solution Approach 1:
The patent employs composite insulating bonding layers with multiple materials (first insulating material, second insulating material, and third insulating material) to achieve superior bonding strength. The composite structure combines the advantages of different materials to overcome the limitations of single-material bonding layers, thereby improving reliability without excessive complexity increase.
Solution Approach 2:
The insulating bonding layer is divided into multiple segments or layers with different materials. This segmentation allows each layer to contribute specific properties (such as adhesion, insulation, or stress relief) to the overall bonding structure, achieving high bonding strength through the coordinated function of multiple segments rather than relying on a single complex material.
2Reliability
If insulating bonding layers made of different materials are used to enhance bonding strength, then reliability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent utilizes parameter changes in the form of different deposition temperatures for forming the various insulating bonding layers. By controlling the deposition temperature as a key parameter, the patent achieves optimized bonding strength and material compatibility. This approach allows the complex multi-material structure to be manufactured through controlled parameter variations rather than requiring entirely different manufacturing processes for each material layer.
3Strength
If multiple insulating materials with different deposition temperatures are used, then thermal stress is reduced and bonding strength increases, but the number of process steps increases
Solution Approach 1:
The patent systematically varies the deposition temperature parameter across different insulating bonding layers to optimize bonding strength and reduce thermal stress. By establishing a controlled parameter gradient, the patent achieves improved bonding performance while managing the increase in process steps through systematic rather than arbitrary parameter changes.
Solution Approach 2:
The use of composite insulating bonding layers with different materials and deposition temperatures creates a multi-functional structure that simultaneously achieves high bonding strength and thermal stress reduction. The composite nature of the bonding layers allows different materials to be deposited at different temperatures, with each material contributing specific properties that collectively enhance bonding performance while managing manufacturing complexity.
Data Source
AI summary
A semiconductor package includes a first semiconductor chip including a first semiconductor layer, a first through-electrode that penetrates through the first semiconductor layer, a first bonding pad connected to the first through-electrode, and a first insulating bonding layer, and a second semiconductor chip on the first semiconductor chip and including a second semiconductor layer, a second bonding pad bonded to the first bonding pad, and a second insulating bonding layer bonded to the first insulating bonding layer, wherein the first insulating bonding layer includes a first insulating material, the second insulating bonding layer includes a first insulating layer that forms a bonding interface with the first insulating bonding layer and a second insulating layer on the first insulating layer, the first insulating layer includes a second insulating material, different from the first insulating material, and the second insulating layer includes a third insulating material, different from the second insulating material.