Semiconductor Chip Bonding Sheet for High-Current Reliability
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Solution Overview
Problem
The increasing current flowing through semiconductor modules requires an enhancement in the allowable current capacity of the wiring connecting semiconductor chips, which existing technologies have not adequately addressed, leading to potential issues such as short circuits and decreased reliability.
Innovation Solution
A semiconductor device design incorporating a conductive bonding sheet between semiconductor chips and metal plates, utilizing Ag particles and an organic binder, which is sintered under pressure to ensure stable bonding and prevent shifting or protrusion, thereby maintaining high reliability and current-carrying capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional wiring structures are used to connect semiconductor chips, then the device complexity is low and ease of manufacture is good, but the current-carrying capacity is insufficient and reliability decreases
Solution Approach 1:
The patent employs a composite bonding structure consisting of a conductive bonding sheet with Ag particles embedded in an organic binder, combined with a metal plate having a specific layered structure (Cu plate with Ni plate). This composite material approach enables the wiring to achieve higher current-carrying capacity and reliability while maintaining manageable device complexity through standardized integration.
2Reliability
If the wiring current capacity is increased to handle higher currents, then the current-carrying capacity improves, but the risk of short circuits and deformation increases
Solution Approach 1:
The conductive bonding sheet acts as an intermediary layer between the semiconductor chip electrode and the metal plate. This bonding sheet contains Ag particles in an organic binder that provides both electrical conductivity and mechanical stability, preventing direct contact that could cause short circuits while distributing stress to prevent deformation under high current conditions.
Solution Approach 2:
The metal plate employs a layered structure with specific material parameters (Cu plate with Ni plate) and controlled thickness ratios. The Ni plate layer provides oxidation resistance and controlled electrical properties, while the Cu plate provides high conductivity. This parameter optimization allows high current capacity while maintaining structural integrity and preventing harmful effects.
3Reliability
If a simple bonding structure is used between semiconductor chip and metal plate, then ease of manufacture is good, but bonding stability is poor causing shifting or protrusion
Solution Approach 1:
The bonding structure uses a composite conductive bonding sheet with Ag particles dispersed in an organic binder matrix. This composite provides both strong adhesion for bonding stability and appropriate conductivity. The organic binder ensures stable bonding without excessive complexity in the manufacturing process, as the bonding sheet can be applied as a pre-formed layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the current-carrying capacity and reliability of semiconductor devices by preventing deformation and short circuits, ensuring stable bonding and high conductance across the semiconductor chip and metal plate interfaces.
Implementation Method 1
a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor chip having a first electrode on a first surface, a metal plate, and a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate.