Semiconductor Chip Contact Layout for Lower Absorption Loss
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Radiation-emitting semiconductor devices face inefficiencies due to absorption losses from metallic contact structures and transparent conductive layers, which reduce the efficiency of current distribution in semiconductor chips.
Innovation Solution
A radiation-emitting semiconductor chip design featuring a semiconductor body with an active region between different conduction-type semiconductor layers, utilizing overlapping contact finger structures and an insulation layer with dielectric materials to minimize absorption losses and enhance current distribution, while a dielectric mirror layer reduces radiation absorption on contact layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If metallic contact structures or transparent conductive layers are used for current distribution, then current distribution is improved, but absorption losses increase
Solution Approach 1:
The patent introduces an insulation layer as an intermediary between the contact layers and the semiconductor body. This insulation layer with laterally extending contact finger structures enables current distribution without requiring metallic contact structures or transparent conductive layers that cause absorption losses. The insulation layer acts as a mediator that achieves current distribution while minimizing energy loss.
Solution Approach 2:
The patent replaces the conventional metallic contact structures or transparent conductive layers (mechanical/electrical system) with an insulation layer having laterally extending contact finger structures. This substitution eliminates the absorption losses associated with metallic and conductive materials while maintaining the current distribution function through the insulation layer's geometric design.
2Ease of operation
If contact layers are arranged alongside one another without overlapping, then both contact areas are accessible, but the area of active region covered by contact layers increases
Solution Approach 1:
The patent transitions from a two-dimensional lateral arrangement of contact layers to a three-dimensional overlapping configuration. The first and second contact layers are arranged to overlap in plan view, with contact finger structures extending laterally in different directions. This dimensional change allows both contact areas to remain accessible while reducing the total area covered by contact layers on the active region.
Solution Approach 2:
The patent implements a nested configuration where the contact finger structures of the first and second contact layers are positioned to overlap and interdigitate. The contact fingers of one layer are arranged within or alongside the contact fingers of the other layer, creating a nested pattern that maximizes contact accessibility while minimizing the footprint on the active region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design increases the brightness of the semiconductor chip by reducing absorption losses and improving current density distribution, leading to higher efficiency and reduced 'droop' effects at high operating currents.
Implementation Method 1
The semiconductor chip comprises an insulation layer (6) containing a dielectric material
Implementation Method 2
a dielectric mirror layer reduces radiation absorption on contact layers
Data Source
AI summary
In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.


