Semiconductor Chip Dicing with Multi-Depth Laser Modified Regions
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Solution Overview
Problem
Current semiconductor packaging methods, such as dicing using laser light, face challenges in efficiently separating semiconductor chips with minimal damage and ensuring uniformity in the formation of modified regions for precise dicing and molding.
Innovation Solution
A manufacturing method involving the formation of first and second modified regions in a semiconductor substrate at different depths and directions, using laser light to create cracks for precise dicing and subsequent mounting on a package substrate with a molding layer that flows towards the second side surface, optimizing chip separation and reducing cleavage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser light is used for dicing semiconductor substrates, then chip separation efficiency is improved, but chip damage and breakage occur
Solution Approach 1:
The patent applies preliminary action by forming modified regions in the semiconductor substrate before the actual dicing process. These modified regions are created at specific depths and orientations to pre-weaken the substrate along desired cleavage lines, enabling controlled chip separation that reduces damage during the cutting process.
Solution Approach 2:
The patent utilizes parameter changes by varying the depth, orientation, and distribution of modified regions within the substrate. By controlling these parameters of the modified regions, the laser process achieves efficient separation while minimizing harmful effects through precise parameter optimization.
2Ease of manufacture
If modified regions are formed at uniform depth, then manufacturing simplicity is maintained, but dicing precision and chip quality deteriorate
Solution Approach 1:
The patent applies local quality by creating modified regions with different depths at different locations within the substrate. Specifically, first modified regions are formed at a first depth and second modified regions at a second depth, allowing optimized dicing precision for different chip areas while maintaining a systematic manufacturing approach.
Solution Approach 2:
The patent introduces depth variation as an additional dimension in the modified region formation process. By controlling the depth parameter of modified regions in addition to their lateral position, the process achieves higher dicing precision without significantly complicating the manufacturing workflow.
3Productivity
If molding material flows towards the first side surface, then packaging speed is improved, but chip cleavage and damage increase
Solution Approach 1:
The patent applies preliminary anti-action by forming modified regions that extend towards the second side surface (opposite to the molding material flow direction). This creates a structural counterbalance that prevents cleavage propagation towards the first side surface during molding,抵消ing the harmful effects of molding material flow.
Solution Approach 2:
The patent utilizes asymmetry by creating modified regions with different depth characteristics on opposite sides of the substrate. The first modified regions and second modified regions are positioned asymmetrically to counterbalance the symmetric molding process, preventing cleavage while maintaining packaging efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise and efficient separation of semiconductor chips with reduced breakage and damage, allowing for improved chip quality and packaging integrity by controlling the growth of cracks and molding material flow.
Implementation Method 1
forming first modified regions in a semiconductor substrate along a first direction at a first depth; forming second modified regions in the semiconductor substrate along a second direction different from the first direction at a second depth different from the first depth
Implementation Method 2
dicing the semiconductor substrate into semiconductor chips using the first and second modified regions
Data Source
AI summary
There are provided a semiconductor chip, a semiconductor package, and manufacturing methods thereof. The semiconductor chip is manufactured by forming first modified regions in a semiconductor substrate along a first direction at a first depth, forming second modified regions in the semiconductor substrate along a second direction different from the first direction at a second depth different from the first depth, and dicing the semiconductor substrate into semiconductor chips using the first and second modified regions. The semiconductor package is manufactured to include such a diced semiconductor chip.