Semiconductor Chip Dummy Bump Layout for Better Heat Dissipation
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Solution Overview
Problem
The challenge is to enhance the thermal characteristics of semiconductor chips and packages while achieving miniaturization and weight reduction, which is essential for the development of smaller and lighter electronic devices.
Innovation Solution
The solution involves incorporating a dummy bump with a wider width than the signal bump on the semiconductor chip, and ensuring that the topmost line contacts the dummy bump. This configuration improves thermal characteristics by increasing the area for heat dissipation and enhancing heat transfer efficiency between adjacent chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the bump diameter is reduced to achieve miniaturization, then the device size is reduced, but the thermal characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating different bump types (signal bumps and dummy bumps) with different functions within the same semiconductor device. The dummy bumps are specifically designed with larger diameters than signal bumps to provide enhanced heat dissipation pathways, while signal bumps maintain smaller diameters for miniaturization and electrical connectivity purposes.
Solution Approach 2:
The dummy bumps serve multiple functions: they act as heat sinks to improve thermal characteristics, provide mechanical support to the semiconductor substrate, and can be configured to match the pitch of signal bumps for uniform device structure. This multi-functionality allows the device to achieve both miniaturization and improved thermal management.
2Productivity
If the TSV diameter is reduced to increase density, then the chip capacity increases, but the heat transfer efficiency deteriorates
Solution Approach 1:
The patent creates a dual-structure system where TSVs provide vertical electrical interconnects with reduced diameters for high density, while dummy bumps provide lateral heat dissipation pathways with larger cross-sectional areas. This local differentiation allows simultaneous achievement of high chip capacity through small TSVs and improved heat transfer through large dummy bumps.
3Productivity
If the bump diameter is reduced to improve device density, then the capacity increases, but the thermal management capability deteriorates
Solution Approach 1:
The patent transitions from relying solely on vertical heat dissipation through narrow TSVs to incorporating lateral heat dissipation through dummy bumps. This dimensional expansion of heat transfer pathways (from 1D vertical to 2D lateral+vertical) enables improved thermal management while maintaining high device density through small TSV diameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively improves the thermal characteristics of semiconductor chips and packages, enabling better heat management and performance in compact electronic devices.
Implementation Method 1
This configuration improves thermal characteristics by increasing the area for heat dissipation
Implementation Method 2
enhancing heat transfer efficiency between adjacent chips
Data Source
AI summary
A semiconductor device includes a semiconductor element layer including a semiconductor substrate including a bump area and a dummy bump area. A TSV structure is in the bump area and vertically extends through the semiconductor substrate, a first topmost line is in the bump area and on the TSV structure and electrically connected to the TSV structure, a signal bump is in the bump area and has a first width in a first direction and is electrically connected to the TSV structure via the first topmost line, a second topmost line is in the dummy bump area and has the same vertical level as a vertical level of the first topmost line and extends in the first direction, and a dummy bump is in the dummy bump area and contacts the second topmost line and has a second width in the first direction larger than the first width.