Semiconductor Chip Edge Stress Field for Crack-Resistant Dicing
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Solution Overview
Problem
Semiconductor devices manufactured by blade dicing often experience chipping and microcracking during the cutting process, leading to thermal stress cracking and device failure due to increased heat generation and integration, which existing methods fail to adequately address.
Innovation Solution
A semiconductor device with a compressive stress field formed near the edge regions using a scribing and breaking process, where a scribe line is created on the wafer and an external force is applied to divide it, reducing chipping and microcracking and enhancing the device's ability to withstand thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If blade dicing is used to divide the semiconductor wafer, then the semiconductor chips can be individualized, but chipping and microcracks occur on the cutting end surface
Solution Approach 1:
The patent replaces the mechanical blade dicing process with a laser-based processing method. The laser irradiation creates a modified zone in the semiconductor wafer without physical contact, eliminating the mechanical forces that cause chipping and microcracks. The laser beam selectively modifies the material structure along the scribe line, enabling clean separation without edge damage.
Solution Approach 2:
The patent changes the processing parameters from mechanical cutting to laser-induced material modification. By controlling laser irradiation conditions (energy density, scanning speed, pulse duration), the process transforms the wafer material properties locally, creating a modified zone that facilitates clean breaking without mechanical stress. This parameter change eliminates the trade-off between productivity and surface quality.
2Adaptability or versatility
If the degree of integration and performance is enhanced, then device functionality is improved, but heat generation increases causing thermal stress cracking
Solution Approach 1:
The patent applies preliminary laser irradiation to create a modified zone with altered material properties before the final breaking process. This pre-treatment modifies the thermal and mechanical properties of the semiconductor material in the scribe line region, creating a stress distribution that prevents thermal stress cracking during subsequent device operation. The modified zone acts as a stress relief path that accommodates thermal expansion differences.
3Productivity
If a scribe line is formed and breaking bar is used to divide the substrate, then the semiconductor wafer can be divided, but vertical cracks extend into the substrate causing structural weakness
Solution Approach 1:
The patent replaces the mechanical breaking bar process with laser-induced breaking. Instead of applying mechanical force that propagates vertical cracks through the substrate, the laser method creates a controlled modified zone that guides the breaking process. The laser energy selectively weakens bonds along the scribe line without transmitting mechanical stress into the substrate, preventing vertical crack extension and preserving structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compressive stress field effectively suppresses fracture extension from the edge, improving the bending strength and reliability of semiconductor devices by minimizing chipping and microcracking, thus preventing thermal stress cracking.
Implementation Method 1
a plurality of scribing lines are formed on a first main surface having a metal film coated thereon, from each of which a plurality of vertical cracks extend into the substrate
Implementation Method 2
a semiconductor device (semiconductor chip) improving adhesion between the semiconductor device (semiconductor chip) and a sealing material and enhancing strength of the semiconductor device. The semiconductor device has bending portions along at least two modified zones formed on a side of a substrate by laser irradiation
Implementation Method 3
The modified zones have residual stress greater than both of the substrate top surface and the substrate bottom surface
Implementation Method 4
a compressive stress field in an outer peripheral region on at least one of the mounted surface and the non-mounted surface
Data Source
AI summary
A semiconductor device includes a semiconductor layer (2) composed of a single crystal. The semiconductor device comprises a mounted surface on which an element is mounted, a non-mounted surface opposed to the mounted surface, and a compressive stress field in an outer peripheral region on at least one of the mounted surface and the non-mounted surface.