Chip-Embedded DC-DC Converter Layout for Lower Parasitic Loss
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Solution Overview
Problem
Existing DC-DC converters face inefficiencies and parasitic losses due to non-ideal components and arrangements, limiting their switching speed and performance.
Innovation Solution
The development of a chip-embedded DC-DC power converter with an integrated circuit (IC) chip, enhanced gallium nitride (eGaN) switches, and a pulse width modulator (PWM) controller, where the inductor is positioned outside the chip package and coupled to the IC via vias, reducing parasitic effects and enabling higher switching frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional DC-DC converter components and arrangements are used, then the converter can be manufactured with standard components, but parasitic losses and inefficiencies increase
Solution Approach 1:
The patent combines multiple converter components (switches, inductors, capacitors, control circuitry) into a single integrated chip package, eliminating the need for separate discrete components and their interconnecting parasitic elements. This merging reduces parasitic losses by removing external connections while integrating all necessary functions within the chip structure.
Solution Approach 2:
The patent implements a nested structure where the inductor is positioned within the footprint of the integrated circuit chip, and capacitors are arranged within the inductor's footprint. This nesting arrangement minimizes the overall converter footprint and reduces parasitic inductance by placing magnetic components as close as possible to the switching elements, thereby reducing loop areas and associated parasitic effects.
2Speed
If standard switching frequencies are used, then the converter operates reliably, but switching speed and transient performance are limited
Solution Approach 1:
The patent employs enhanced gallium nitride (eGaN) field effect transistors instead of conventional silicon MOSFETs, fundamentally changing the material parameter to enable higher switching frequencies. The eGaN switches have lower on-resistance and faster switching characteristics, allowing operation at frequencies significantly higher than conventional converters while maintaining reliability through the superior electrical properties of the wide-bandgap material.
3Area of stationary object
If larger converter footprint is used, then components can be arranged with standard layouts, but the converter size becomes excessive for compact applications
Solution Approach 1:
The patent transitions from a planar two-dimensional layout to a three-dimensional stacked architecture. The inductor is positioned vertically above the IC chip, and capacitors are stacked above the inductor, utilizing the vertical dimension to minimize the horizontal footprint. This dimensional transition allows all components to be integrated within a compact volume while maintaining manufacturability through standard PCB stacking and via technologies.
Data Source
AI summary
A direct current to direct current (DC-DC) converter can include a chip embedded integrated circuit (IC), one or more switches, and an inductor. The IC can be embedded in a PCB. The IC can include driver, switches, and PWM controller. The IC and/or switches can include eGaN. The inductor can be stacked above the IC and/or switches, reducing an overall footprint. One or more capacitors can also be stacked above the IC and/or switches. Vias can couple the inductor and/or capacitors to the IC (e.g., to the switches). The DC-DC converter can offer better transient performance, have lower ripples, or use fewer capacitors. Parasitic effects that prevent efficient, higher switching speeds are reduced. The inductor size and overall footprint can be reduced. Multiple inductor arrangements can improve performance. Various feedback systems can be used, such as a ripple generator in a constant on or off time modulation circuit.