On-Chip EOS Protection Circuit With Multiple Discharge Paths

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Solution Overview

Problem

Existing electrical over stress (EOS) protection systems often rely on external circuits, which may be insufficient, leaving internal chip circuits vulnerable to damage from high electric fields caused by events like electromagnetic pulses or electrostatic discharges.

Innovation Solution

An EOS protection device is integrated within the chip, comprising a first protection resistor circuit, detection circuit, voltage divider circuit, and discharge protection circuit, which detect and discharge excessive voltage or current through multiple paths to prevent internal chip damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If protection relies on external circuits, then device complexity is reduced, but protection reliability is insufficient when external protection is inadequate or absent

Engineering Contradiction:
Improveprotection reliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the protection function with the internal chip circuit by integrating an EOS protection device directly into the chip. The protection circuit includes a first protection resistor circuit coupled to the pad, a detection circuit coupled to the first protection resistor circuit, a voltage divider circuit coupled to the detection circuit and ground terminal, and a discharge protection circuit coupled to the pad, detection circuit, and ground terminal. This integration ensures that protection is inherently built into the chip structure, eliminating reliance on external protection circuits while maintaining comprehensive protection coverage.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If multiple discharge paths are provided, then protection effectiveness is improved, but device complexity increases

Engineering Contradiction:
Improveprotection effectivenessVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the protection function into multiple discharge paths: a first discharge path formed by the first protection resistor circuit, detection circuit, and voltage divider circuit; and at least one second discharge path provided by the discharge protection circuit. This segmentation allows excessive voltage or current to be discharged through multiple independent paths, improving protection effectiveness while organizing the complexity into modular, manageable components with clear functional divisions.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents damage to internal chip circuits by quickly discharging excessive voltage or current through multiple discharge paths, enhancing protection against EOS events.

Implementation Method 1

The transistor is turned on when the input voltage is higher than the preset voltage

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

the excessive voltage or current may be quickly discharged through the first discharge path and the second discharge path

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11894671B2Electrical over stress protection device
Publication Date: 2024.02.06 NAN YA TECH
  • US11894671B2 patent drawing
  • US11894671B2 patent drawing
  • US11894671B2 patent drawing

AI summary

An electrical over stress protection device is provided. A detection circuit detects an input voltage from a pad, provides a first discharge path when the input voltage is higher than a preset voltage, and provides a turn-on voltage to a discharge protection circuit to control the discharge protection circuit to provide at least one second discharge path.