Semiconductor Chip ID Structure Using Dopant Timing Signatures
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Solution Overview
Problem
Existing chip identification methods, such as laser chip scribes or barcodes, are vulnerable to modification or duplication, compromising security and accuracy in identifying semiconductor devices.
Innovation Solution
A semiconductor device structure incorporating groups of transistors with varying dopant concentrations in channel structures, utilizing a unified gate structure and merged S/D epitaxial and contact structures to generate unique output signals for chip identification, ensuring authenticity and security.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser chip scribes or barcodes are used for chip identification, then chip identification is achieved, but the identification is vulnerable to modification or duplication
Solution Approach 1:
The patent merges the identification function with the existing transistor structure by utilizing variations in dopant concentrations within the channel structures. This integration eliminates the need for separate identification labels or barcodes, creating a security feature that is intrinsic to the device architecture itself. The unique digital codes are generated by the electrical characteristics of the transistor channels, making the identification inseparable from the functional structure.
Solution Approach 2:
The transistor structures serve dual purposes: they perform their primary function as switching elements while simultaneously generating unique identification codes through their inherent electrical characteristics. The variations in dopant concentrations create naturally occurring electrical signatures that serve as self-identifying features, eliminating the need for external identification mechanisms and their associated security vulnerabilities.
2Reliability
If groups of transistors with varying dopant concentrations are used for identification, then secure chip identification is achieved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent intentionally introduces controlled variations in dopant concentrations as the basis for identification. By treating manufacturing variations not as defects to be eliminated but as useful parameters to be harnessed, the system converts inherent manufacturing imprecision into a security feature. The unique electrical characteristics resulting from dopant variations create naturally distinct identification codes for each chip.
Solution Approach 2:
The identification mechanism relies on local variations in dopant concentrations within specific channel structures. Rather than requiring uniform high precision across the entire wafer, the system exploits localized differences in electrical properties to generate unique identifiers. This approach allows manufacturing variations to be captured and utilized at the local level without compromising overall device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure provides secure and reliable chip identification by generating unique digital codes based on signal timing differences, resistant to duplication or modification, enhancing security and accuracy.
Implementation Method 1
groups of transistors with varying dopant concentrations in channel structures
Implementation Method 2
generating unique output signals for chip identification, ensuring authenticity and security
Data Source
AI summary
The present disclosure describes a semiconductor device having an identification device for chip identification. The semiconductor structure includes first and second channel structures on a substrate, a gate structure on the first and second channel structures, an epitaxial structure on the first and second channel structures, and a first source/drain (S/D) contact structure on the first channel structure. The epitaxial structure is at a first side of the gate structure and the first S/D contact structure is at a second side of the gate structure opposite to the first side. The semiconductor structure further includes a second S/D contact structure on the second channel structure. The second S/D contact structure is at the second side of the gate structure.