Integrated Chip Inductor Structure With Residue-Blocking Magnetic Layers

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Solution Overview

Problem

Inductor structures on integrated circuits face challenges due to residue from the oxygen-CZT layer, which affects the magnetic field concentration and efficiency, as the residue is resistant to dry etching and can stick to the etch stop layer, leading to magnetic field leakage.

Innovation Solution

Incorporating a pattern enhancement layer between the magnetic structure and the etch stop layer, which is thicker than the magnetic structure's lowermost layer, to provide additional time and space for residue removal during wet etching, ensuring the residue is completely removed before contacting the etch stop layer, thus preventing residue buildup and enhancing magnetic field concentration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If dry etching is used to remove oxygen-CZT residue, then the etching process is simpler, but the residue is resistant to dry etching and remains on the etch stop layer

Engineering Contradiction:

Improveetching process simplicityVSAvoidresidue removal effectiveness

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the etching parameter from dry etching to wet etching. The wet etching process uses chemical solutions that effectively dissolve the oxygen-CZT residue, which is resistant to dry etching. This parameter change resolves the contradiction by maintaining process simplicity while achieving effective residue removal.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical/physical dry etching process with a chemical wet etching process. The wet etching uses chemical reactions to remove the oxygen-CZT residue, which cannot be effectively removed by dry etching methods. This substitution resolves the contradiction between process simplicity and residue removal effectiveness.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Device complexity

If the magnetic structure is placed directly on the etch stop layer, then the device complexity is reduced, but residue from the magnetic structure contacts the etch stop layer causing magnetic field leakage

Engineering Contradiction:

Improvelayer structure simplicityVSAvoidmagnetic field concentration

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent introduces a pattern enhancement layer as an intermediary between the magnetic structure and the etch stop layer. This intermediate layer prevents direct contact between the oxygen-CZT residue from the magnetic structure and the etch stop layer, thereby preventing magnetic field leakage while maintaining relatively simple device architecture.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the interface between the magnetic structure and etch stop layer by inserting a pattern enhancement layer. This segmentation creates a distinct intermediate zone that handles the residue containment function, separating the magnetic field generation function from the residue management function, thus preventing magnetic field leakage.

Inventive Principle:

Principle #1Segmentation

3Reliability

If wet etching is used to remove oxygen-CZT residue, then residue removal effectiveness is improved, but the etching time increases

Engineering Contradiction:

Improveresidue removal effectivenessVSAvoidetching process time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent performs preliminary action by forming the pattern enhancement layer before depositing the magnetic structure. This intermediate layer is pre-configured to facilitate residue removal during wet etching, allowing the subsequent wet etching process to be more efficient and faster than it would be without the preparatory layer in place.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The pattern enhancement layer effectively removes the oxygen-CZT residue before it contacts the etch stop layer, ensuring reliable magnetic field concentration and improved inductor performance by preventing residue-induced leakage.

Implementation Method 1

providing additional time and space for residue removal during wet etching

Methodology Applied

Scientific EffectWet etching:

Implementation Method 2

ensuring reliable magnetic field concentration and improved inductor performance

Methodology Applied

Scientific EffectMagnetic field concentration: Magnetic Field

Data Source

PatentUS11784211B2Integrated chip inductor structure

Publication Date: 2023.10.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.