Semiconductor Chip Layout for Lower Thermal Resistance

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Solution Overview

Problem

Current semiconductor devices face challenges in achieving optimal heat dissipation and thermal resistance management due to the close proximity of semiconductor chips, leading to thermal interference and reduced heat dissipation efficiency.

Innovation Solution

The semiconductor device design includes two semiconductor chips with a predetermined chip width and distance between them, positioned on a heat dissipation base board, where the distance is optimized to minimize thermal resistance by positioning the heat dissipation point directly under the midpoint between the chips, thereby reducing thermal interference and enhancing heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor chips are disposed in close proximity to increase integration density, then productivity and device compactness are improved, but thermal interference increases and heat dissipation efficiency deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidthermal interference
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent applies local quality by creating a non-uniform thermal conduction path with varying cross-sectional areas. The heat dissipation structure has different thickness regions: thinner regions directly under semiconductor chips for efficient heat extraction, and thicker regions in intermediate zones to redirect heat flow. This localized variation in thermal conductivity optimizes heat dissipation for each chip while maintaining close spacing for high integration density.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent transitions from two-dimensional planar heat dissipation to three-dimensional volumetric heat management. By designing the heat dissipation structure with varying thickness in the vertical dimension, the patent creates multiple heat conduction pathways that extend downward, effectively increasing the heat dissipation surface area and reducing thermal interference between closely spaced chips.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If semiconductor chips are disposed close together, then device compactness is improved, but heat dissipation efficiency deteriorates due to thermal interference

Engineering Contradiction:
Improvedevice footprintVSAvoidheat dissipation efficiency
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The heat dissipation structure implements local quality through spatially varying thickness: thin regions (first thickness) positioned directly under each semiconductor chip provide low-thermal-resistance pathways for heat extraction, while thick regions (second thickness) in between chips act as thermal barriers that redirect heat flow toward dedicated dissipation points, thereby reducing thermal interference and maintaining high heat dissipation efficiency in a compact footprint.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The thick intermediate regions of the heat dissipation structure serve as thermal mediators between adjacent semiconductor chips. These regions redirect and isolate heat flow from each chip, preventing thermal coupling between neighboring devices. This intermediary structure enables compact chip spacing while maintaining independent heat dissipation pathways for each chip.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If the distance between semiconductor chips is reduced, then integration density is improved, but thermal resistance management becomes more difficult

Engineering Contradiction:
Improveintegration densityVSAvoidthermal resistance management
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies parameter changes by systematically varying the thickness parameter of the heat dissipation structure across different spatial locations. The thickness transitions from thin regions under chips to thick regions between chips, creating an optimized thermal conduction path that maintains low thermal resistance even when chip spacing is reduced for high integration density.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The heat dissipation structure implements local quality through position-dependent thickness variation. Each semiconductor chip region has customized thermal pathways with optimal thickness for its specific location, allowing independent thermal management for each chip while maintaining close spacing. This localized optimization ensures reliable thermal resistance management in high-density configurations.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces thermal resistance and improves heat dissipation reliability without altering the device's characteristics or construction, maintaining rated current and preventing reliability deterioration.

Implementation Method 1

a lower limit of the chip distance is set based on a first distance, where a minimum thermal resistance of a heat dissipation path from a heat generation point on the first front surface of the first semiconductor chip to a heat dissipation point on the bottom surface of the board is achieved

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS20240379485A1Semiconductor device
Publication Date: 2024.11.14 FUJI ELECTRIC CO LTD
  • US20240379485A1 patent drawing
  • US20240379485A1 patent drawing
  • US20240379485A1 patent drawing

AI summary

A semiconductor device includes first and second semiconductor chips disposed away from each other by a chip distance on an insulated circuit board. A lower limit of the chip distance between the first and second semiconductor chips is set based on a first distance where a minimum thermal resistance of a heat dissipation path from a heat generation point on the front surface of the first semiconductor chip to a heat dissipation point on the bottom surface of the board is achieved with respect to the chip width of the first and second semiconductor chips. The heat dissipation point is positioned at the bottom surface of the board directly under a midpoint between the first and second semiconductor chips in side view.