Chip-Level Heat Dissipation Using Silicon Substrate
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Solution Overview
Problem
Current cooling solutions for mobile semiconductors are inefficient, wasteful of material, consume excessive power, and are not designed for miniature, lightweight, low-profile applications, failing to effectively manage heat dissipation in mobile devices.
Innovation Solution
The integration of a thermal conductive layer and vias within the silicon semiconductor substrate, combined with a silicon heat sink, enhances thermal conductivity and emissivity, allowing for direct metal-to-metal bonding and efficient heat dissipation without the need for thermal interface materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional metallic heat sinks with TIM are used, then heat dissipation is achieved, but the device becomes too heavy, too large, and consumes excessive power
Solution Approach 1:
The patent merges the heat sink functionality directly into the semiconductor substrate by integrating thermal conductive vias and heat dissipation structures within the chip itself. This eliminates the need for separate external heat sinks and TIM layers, achieving heat dissipation while minimizing weight and space.
Solution Approach 2:
The patent extracts the thermal interface material (TIM) from the heat dissipation system by achieving direct metal-to-metal bonding between the semiconductor chip and heat sink. This eliminates the TIM layer that added weight and thermal resistance, allowing the heat sink to be minimized in size and weight.
2Temperature
If traditional metallic heat sinks with TIM are used, then heat dissipation is achieved, but the device becomes too large and profile is increased
Solution Approach 1:
The heat dissipation functionality is merged into the chip-level structure through integrated thermal vias and substrate-based heat conduction paths. This eliminates the need for thick external heat sinks and TIM layers, achieving low-profile heat dissipation suitable for mobile devices.
3Temperature
If traditional metallic heat sinks with TIM are used, then heat dissipation is achieved, but material usage is excessive and inefficient
Solution Approach 1:
The patent combines multiple functions into the semiconductor substrate itself, using the substrate as both the device platform and the thermal conduction path. This eliminates redundant materials like TIM and reduces the size of external heat sinks, achieving efficient heat dissipation with minimal material usage.
4Temperature
If traditional metallic heat sinks with TIM are used, then heat dissipation is achieved, but power consumption is excessive
Solution Approach 1:
The integrated chip-level heat dissipation structure utilizes the semiconductor substrate's own thermal conduction properties and directly bonded heat sink to passively dissipate heat. This eliminates the need for active cooling components and excessive power consumption, achieving efficient heat management through the device's inherent structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases thermal dissipation rates, reduces material usage, and minimizes power consumption, enabling higher performance and efficient heat management in mobile devices by achieving thermal conductivity coefficients of 350 and above.
Implementation Method 1
a layer of thermal conductive material on the second surface... significantly increases thermal dissipation rates... achieving thermal conductivity coefficients of 350 and above
Implementation Method 2
combined with a silicon heat sink, enhances thermal conductivity and emissivity... efficient heat dissipation
Data Source
AI summary
A semiconductor device that includes a semiconductor chip having a first silicon substrate with opposing first and second surfaces, a semiconductor device formed at or in the first surface, a plurality of first contact pads formed at the first surface which are electrically coupled to the semiconductor device, a layer of thermal conductive material on the second surface, and a plurality of first vias formed partially through the layer of thermal conductive material.