Semiconductor Chip With Oblique Reflector for Directional Emission
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Solution Overview
Problem
Conventional radiation-emitting semiconductor chips have a Lambertian emission characteristic, making it difficult to achieve a desired emission angle for applications like vehicle headlights or distance measurement devices, where efficient directional radiation emission is required.
Innovation Solution
A semiconductor chip design featuring a semiconductor layer sequence with an active layer and an obliquely extending reflector surface, allowing electromagnetic radiation to be guided and emitted at a specific angle, enhancing directional emission and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional Lambertian emission characteristic is used, then manufacturing is simple, but directional radiation emission efficiency is poor
Solution Approach 1:
The invention introduces a vertical dimension to radiation control by tilting the reflector surface at a specific angle (e.g., 45 degrees) relative to the active layer. This three-dimensional geometric configuration redirects radiation that would otherwise emit in all directions (Lambertian) into a specific directional beam, transforming the emission pattern from omnidirectional to unidirectional without complicating the manufacturing process
2Productivity
If oblique reflector surface is added for directional emission, then radiation emission efficiency improves, but device complexity increases
Solution Approach 1:
The reflector surface is integrated directly with the semiconductor chip structure, merging the reflection function into the chip itself rather than adding a separate external component. This integration achieves directional radiation emission while minimizing device complexity by combining multiple functions (radiation generation and directional reflection) into a single unified structure
Solution Approach 2:
The invention changes the geometric parameter of the reflector surface by tilting it at a specific angle (e.g., 45 degrees) relative to the active layer. This parameter change transforms the emission characteristic from Lambertian to directional, improving radiation emission efficiency without requiring complex additional components
3Ease of manufacture
If radiation is emitted in all directions (Lambertian), then manufacturing is easier, but brightness in specific direction is reduced
Solution Approach 1:
The tilted reflector surface introduces a vertical dimension to radiation control, redirecting omnidirectional radiation into a specific directional beam. This geometric transformation concentrates the radiation intensity in the desired direction, significantly improving brightness without complicating manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The chip achieves efficient directional radiation emission, optimizing the use of generated radiation and enabling compact design, suitable for applications such as vehicle headlights and distance measurement devices with improved brightness and luminous flux.
Implementation Method 1
a reflector (4) having a reflector surface (20) extending obliquely with respect to the active layer (3)... electromagnetic radiation generated in the active layer (3) during operation is reflected by the reflector (4)
Data Source
AI summary
A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.