Electronic Chip Package With Backside Conductive Layer
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Solution Overview
Problem
Existing electronic chip packages face challenges in achieving compactness and efficient electrostatic discharge protection due to limitations in substrate thickness and conductive layer placement, which affect current distribution and intensity.
Innovation Solution
A semiconductor device with a thin substrate and a metallic conductive layer on its back side, covered by an insulating sheath, forming a CSP-type package, where the conductive layer is in contact with the sheath and the substrate, enabling improved current distribution and electrostatic discharge handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thicker substrate is used, then mechanical strength is improved, but electrostatic discharge protection performance deteriorates
Solution Approach 1:
The substrate is segmented into a thin active area (for ESD protection) and a thicker peripheral area (for mechanical support). This is achieved by defining a doped area that extends through the thin substrate region while the peripheral portion maintains greater thickness, allowing both mechanical strength and ESD performance to coexist
Solution Approach 2:
Different regions of the substrate have different thicknesses tailored to their specific functions. The central active region is thin to enable effective ESD protection through the substrate, while the peripheral region is thicker to provide mechanical strength and support for the package structure
2Ease of manufacture
If the conductive layer is placed only on the front side, then manufacturing simplicity is improved, but current distribution uniformity deteriorates
Solution Approach 1:
The conductive layer is extended from a single-sided configuration to a dual-sided configuration, with the conductive layer present on both the front and back sides of the substrate. This dimensional change allows current to enter and exit the active area from both sides, creating uniform current distribution through the substrate thickness
3Area of stationary object
If a CSP-type package is used, then device compactness is improved, but electrostatic discharge handling capacity deteriorates
Solution Approach 1:
The substrate thickness parameter is reduced to enable CSP-type compact packaging, while simultaneously introducing a metallic conductive layer on the back side to compensate for the reduced ESD handling capacity that would normally result from the thinner substrate
4Area of stationary object
If the substrate is made thinner, then package compactness is improved, but mechanical strength deteriorates
Solution Approach 1:
The substrate structure is made composite by combining the semiconductor substrate material with a metallic conductive layer on the back side. This composite structure provides both the thin profile needed for compactness and the enhanced mechanical strength provided by the metallic layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances electrostatic discharge protection by allowing uniform current distribution and higher intensity discharge handling compared to thicker substrates or those without a metallic backside layer, while maintaining a compact package size.
Implementation Method 1
a metallic conductive layer on its back side... enabling improved current distribution and electrostatic discharge handling
Implementation Method 2
covered by an insulating sheath... the conductive layer being in contact with the insulating sheath
Data Source
AI summary
A device comprising a semiconductor substrate, an electrically-conductive layer covering the substrate, and an insulating sheath, the conductive layer being in contact with the insulating sheath on the side opposite to the substrate.