Chip Package Capacitor Structure for Dense 3D Bonding
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Solution Overview
Problem
New packaging technologies for semiconductor dies face manufacturing challenges due to the need for increased density and functionality, particularly in achieving reliable and efficient 3D and 2.5D packaging solutions that address warpage control and heat dissipation while maintaining high performance and reliability.
Innovation Solution
The development of package structures that include a substrate with dies or packages, a protective element acting as both a warpage-control and heat-dissipation component, and the use of testing structures such as test pads in a redistribution layer for verification testing, along with direct bonding techniques and redistribution structures to enhance bonding and routing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If new packaging technologies are adopted to increase density and functionality, then functional density and integration are improved, but manufacturing challenges and reliability issues worsen
Solution Approach 1:
The patent segments the packaging process into distinct stages: forming recesses in the substrate, selectively filling them with capacitor structures, and separately integrating dies or packages. This segmentation allows each component to be optimized and tested independently before final assembly, improving manufacturing reliability while maintaining high functional density.
Solution Approach 2:
The patent performs preliminary actions by pre-forming recesses in the substrate and pre-integrating capacitor structures before die attachment. Test pads are also prepared in advance in the redistribution layer, enabling verification testing before final packaging. This preliminary preparation reduces manufacturing complexity and improves yield.
2Adaptability or versatility
If 3D and 2.5D packaging solutions are implemented to achieve higher integration, then device functionality is improved, but warpage control and heat dissipation challenges worsen
Solution Approach 1:
The patent applies local quality by creating recesses at specific locations in the substrate where dies or packages will be mounted. These recesses provide localized stress relief and warpage control exactly where needed, rather than requiring complex global substrate design. The capacitor structures are also placed locally in the recesses to provide targeted functionality.
Solution Approach 2:
The patent transitions from planar 2D packaging to three-dimensional 3D and 2.5D packaging by utilizing vertical recesses in the substrate. This dimensional change allows for higher integration density while the recess structures themselves help manage warpage by providing mechanical compliance in the vertical dimension.
3Volume of moving object
If smaller package structures are developed to reduce space and height, then package size is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs nesting by placing capacitor structures inside recesses within the substrate, and then mounting dies or packages on top of the substrate. This nested arrangement maximizes space utilization within a compact footprint, reducing overall package size while maintaining manufacturing feasibility through standardized process steps.
Solution Approach 2:
The substrate serves multiple functions simultaneously: it provides mechanical support, contains recesses for warpage control and capacitor integration, and forms part of the final package structure. This multi-functionality reduces the need for additional components and simplifies manufacturing, offsetting the increased precision requirements of miniaturization.
Data Source
AI summary
A package structure and a formation method are provided. The method includes forming a capacitor element over a first chip structure and forming a dielectric layer over the capacitor element. The method also includes forming a conductive bonding structure in the dielectric layer. A top surface of the conductive bonding structure is substantially coplanar with a top surface of the dielectric layer. The conductive bonding structure penetrates through the capacitor element and is electrically connected to the capacitor element. The method further includes bonding a second chip structure to the dielectric layer and the conductive bonding structure through dielectric-to-dielectric bonding and metal-to-metal bonding.