Chip Package With Cavity Carrier And Side Wall Thermal Layers

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Solution Overview

Problem

Traditional chip packaging materials with poor thermal conductance limit the heat dissipation capabilities of compact chip technologies, leading to performance limitations in power semiconductor chips due to insufficient heat spreading and thermal conduction.

Innovation Solution

A chip package design featuring a carrier with cavities and thermally conductive intermediate layers on the chip's side walls to enhance heat dissipation, utilizing materials with high thermal conductance such as metals and solder materials to increase the surface area for heat transfer from the chip to the carrier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional organic materials are used to surround and insulate the chip, then electrical insulation is achieved, but thermal conductance is insufficient (approximately 1 W/mK)

Engineering Contradiction:
Improveelectrical insulationVSAvoidheat dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent divides the thermal management function into multiple segments: the carrier provides structural support and primary heat sinking, while intermediate layers with high thermal conductance are strategically placed at the chip-carrier interface and along side walls to create multiple thermal conduction pathways, effectively segmenting the heat dissipation route to overcome the limitations of single-material approaches

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs composite material structures combining materials with different thermal and electrical properties. The carrier uses materials like copper or aluminum alloys for high thermal conductance, while intermediate layers utilize solder materials or metal matrices with thermal conductance exceeding 10 W/mK. This composite approach allows simultaneous achievement of electrical insulation and superior thermal management

Inventive Principle:
Principle #40Composite materials

2Area of moving object

If chip size is reduced for compact technology, then integration density increases, but heat spreading area decreases leading to thermal limitations

Engineering Contradiction:
Improvechip surface areaVSAvoidheat spreading capability
Core Design Contradiction:
Area of moving objectVSTemperature

Solution Approach 1:

The patent transitions from two-dimensional heat spreading on the chip surface to three-dimensional heat dissipation by utilizing vertical side walls and extending thermal conduction pathways through the carrier thickness. Intermediate layers are applied on side walls to create additional thermal conduction surfaces in the vertical dimension, effectively increasing heat spreading capability without increasing chip footprint area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves heat spreading and dissipation capabilities, effectively addressing the thermal limitations of compact chip technologies by increasing the available surface area for thermal conduction and enhancing cooling efficiency, particularly for small power semiconductor chips.

Implementation Method 1

the at least one intermediate layer is configured to thermally conduct heat from the chip to the carrier

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS8815647B2Chip package and a method for manufacturing a chip package
Publication Date: 2014.08.26 INFINEON TECHNOLOGIES AG
  • US8815647B2 patent drawing
  • US8815647B2 patent drawing
  • US8815647B2 patent drawing

AI summary

A chip package is provided, the chip package including: a carrier including at least one cavity; a chip disposed at least partially within the at least one cavity; at least one intermediate layer disposed over at least one side wall of the chip; wherein the at least one intermediate layer is configured to thermally conduct heat from the chip to the carrier.