Chip Package Structure Using Insulating-Layer Conductive Posts

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Solution Overview

Problem

The miniaturization of chip package structures in semiconductor technology is hindered by the increased volume occupied by conductive structures, such as through silicon via (TSV) processes, which also raise manufacturing costs and complexity.

Innovation Solution

A semiconductor device design featuring a conductive layer with first pads, composite structures with chips, insulating layers, and second pads, where conductive posts connect the second pads to the first pads, allowing for higher integration and flexibility without occupying chip space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through silicon via (TSV) conductive structures are used to connect chips, then electrical connection between chips is achieved, but the volume occupied inside chips increases and manufacturing complexity rises

Engineering Contradiction:
Improveelectrical connectionVSAvoidchip volume
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

The conductive structures are extracted from the chip interior and relocated to the insulating layer surrounding the chip. This removes the volume occupation from within the chip while maintaining the electrical connection function through external conductive posts that connect to pads on the chip surface.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

An insulating layer is introduced as an intermediary medium between the chip and the conductive structures. This insulating layer hosts the conductive posts and connects to chip pads through bonding pads, enabling electrical connection without requiring holes through the chip itself.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If through silicon via (TSV) conductive structures are used to connect chips, then electrical connection between chips is achieved, but manufacturing complexity and costs increase

Engineering Contradiction:
Improveelectrical connectionVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The complex TSV drilling and filling process is replaced by forming conductive posts in the insulating layer, which can be accomplished through standard semiconductor fabrication processes such as spin coating, curing, and patterning, significantly reducing manufacturing complexity.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The insulating layer serves as a temporary or sacrificial structure during manufacturing that simplifies the overall process. It enables easy formation of conductive connections without requiring permanent modification of the chip structure through complex TSV processes.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Length of moving object

If chip feature sizes are reduced to achieve miniaturization, then smaller chip dimensions are achieved, but the requirements on chip package technology become more stringent

Engineering Contradiction:
Improvechip dimensionVSAvoidpackage technology requirements
Core Design Contradiction:
Length of moving objectVSDevice complexity

Solution Approach 1:

The connection architecture transitions from vertical through-chip connections (TSV) to a planar arrangement using conductive posts in the insulating layer that connect to surface pads. This dimensional change allows better scaling for miniaturized chips while reducing package complexity requirements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The electrical connection function is segmented into multiple components: chip pads, insulating layer with conductive posts, and bonding pads. This segmentation allows independent optimization of each component and simplifies the overall packaging requirements for miniaturized devices.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250029954A1Semiconductor devices and manufacturing methods thereof, chip package structures
Publication Date: 2025.01.23 YANGTZE MEMORY TECH CO LTD
  • US20250029954A1 patent drawing
  • US20250029954A1 patent drawing
  • US20250029954A1 patent drawing

AI summary

In one example, a semiconductor device includes a conductive layer, composite structures, conductive posts and first pads. The composite structures may be located on the conductive layer and stacked in a direction perpendicular to the plane in which the conductive layer is located. The composite structure may include a chip, an insulating layer surrounding around the chip, and at least one second pad electrically connected with the chip. The second pad is located on the insulating layer. The second pads of the composite structures are at different locations in the first direction. The first direction is perpendicular to the thickness direction of the composite structures. The conductive posts are located in the insulating layer of the composite structures and each conductive post is connected with one of the second pads and one of the first pads.