Chip Package Structure With Embedded Capacitor and Warpage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing advanced packaging technologies for semiconductor dies, particularly in achieving high density and functionality while managing warpage, heat dissipation, and interconnection complexity.
Innovation Solution
The development of a package structure that includes a substrate carrying one or more dies or packages, a protective element acting as both a warpage-control and heat dissipation component, and embedded capacitor elements with tunable capacitance, all integrated through advanced bonding techniques like dielectric-to-dielectric and metal-to-metal bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If advanced packaging technologies are used to increase density and functionality, then functional density increases, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent combines multiple chip structures with different functionalities (logic die, memory die, capacitor elements) into a single integrated package structure. This merging approach increases functional density by consolidating multiple components that would traditionally require separate packages, while the standardized bonding processes help manage the manufacturing complexity of integrating these diverse elements.
Solution Approach 2:
The package structure is designed with universal bonding interfaces and standardized die attachment methods that can accommodate multiple types of semiconductor devices and passive components. This multi-functionality allows the same packaging platform to support various configurations of active and passive components, increasing adaptability without proportionally increasing manufacturing complexity.
2Adaptability or versatility
If multiple chip structures are bonded together to increase functionality, then functional density increases, but warpage control becomes more difficult
Solution Approach 1:
The patent applies different dielectric bonding structures and support elements at specific locations within the package to locally compensate for warpage. By placing support structures beneath particular chip structures and using dielectric materials with appropriate mechanical properties, the design addresses warpage control locally rather than requiring uniform reinforcement across the entire package, thus maintaining functional density while managing stability.
3Loss of time
If capacitor elements are embedded close to chip structures to reduce interconnection length, then time delay decreases, but manufacturing precision requirements increase
Solution Approach 1:
The capacitor elements are pre-positioned and bonded to the substrate before the chip structures are attached. This preliminary action allows for precise placement of the capacitor elements at optimal locations close to their corresponding chip structures, reducing interconnection length and time delay. The pre-assembly approach enables better control over placement precision compared to attempting to position components after the main chip structures are already in place.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the performance and reliability of semiconductor packages by improving routing flexibility, reducing time delays, and effectively managing thermal and mechanical stresses, making it suitable for advanced portable devices.
Implementation Method 1
bonding a second chip structure to the dielectric bonding structure and the conductive bonding structures through dielectric-to-dielectric bonding and metal-to-metal bonding
Implementation Method 2
bonding a second chip structure to the dielectric bonding structure and the conductive bonding structures through dielectric-to-dielectric bonding and metal-to-metal bonding
Implementation Method 3
a protective element acting as both a warpage-control and heat dissipation component
Data Source
AI summary
A package structure and a formation method are provided. The method includes receiving a first chip structure, and the first chip structure has multiple conductive bonding structures and a dielectric bonding structure surrounding the conductive bonding structures. Top surfaces of the conductive bonding structures and the dielectric bonding structure are coplanar. The method also includes bonding a second chip structure to the dielectric bonding structure and the conductive bonding structures through dielectric-to-dielectric bonding and metal-to-metal bonding. The method further includes forming an insulating layer over the first chip structure, and the insulating layer laterally surrounds the first chip structure. In addition, the method includes forming a capacitor element laterally spaced apart from the second chip structure, and the insulating layer partially surrounds the capacitor element.