Multi-Layer Gap-Filling in Chip Packages for Die Stress Relief
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Solution Overview
Problem
The reliability of protective layers in semiconductor chip packages is compromised due to die-to-die stress and thermal expansion mismatch, leading to potential delamination and cracking, which affects the long-term reliability of the chip package structure.
Innovation Solution
A multi-layer underfill structure with different Young's modulus and thermal expansion coefficients is used to buffer stress between semiconductor dies and the interposer substrate, and an encapsulating layer is formed to surround the dies, enhancing adhesion and reducing stress-related issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protective layers are applied to semiconductor chip packages, then reliability is improved, but stress and thermal expansion mismatch cause delamination and cracking
Solution Approach 1:
The patent applies parameter changes by selecting underfill materials with specific thermal expansion coefficients and Young's modulus values that match the semiconductor dies and interposer substrate. This parameter matching reduces thermal stress and prevents delamination while maintaining adhesion strength under temperature cycling conditions.
Solution Approach 2:
The patent implements local quality by applying underfill material specifically in the gap regions between adjacent semiconductor dies, rather than uniformly across the entire package. This targeted application provides stress buffering exactly where die-to-die stress concentrations occur, preventing delamination at critical interfaces.
2Reliability
If underfill material is used to buffer stress, then delamination is prevented, but manufacturing complexity increases
Solution Approach 1:
The patent introduces underfill material as an intermediary substance between the semiconductor dies and the surrounding protective layers. This intermediary layer absorbs and distributes stress, preventing direct stress transfer that would cause delamination, while the material itself remains simple in composition and application.
3Reliability
If multiple gap-filling layers with different Young's modulus are used, then stress buffering is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the gap-filling structure into multiple layers with different Young's modulus values. The first gap-filling layer has a higher Young's modulus than the second gap-filling layer, creating a gradient structure that progressively buffers stress from rigid to compliant layers, improving overall stress management while maintaining clear manufacturing specifications for each layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces die-to-die stress, prevents delamination, and enhances the long-term reliability of the chip package structure by using underfill material layers with varying Young's modulus and thermal expansion coefficients, and an encapsulating layer to manage thermal expansion mismatch.
Implementation Method 1
A multi-layer underfill structure with different Young's modulus and thermal expansion coefficients is used to buffer stress between semiconductor dies and the interposer substrate
Implementation Method 2
thermal expansion mismatch, leading to potential delamination and cracking
Implementation Method 3
an encapsulating layer is formed to surround the dies, enhancing adhesion and reducing stress-related issues
Data Source
AI summary
Structures and formation methods of a chip package structure are provided. The chip package structure includes an interposer substrate including first and second die regions that are separated by a gap region. The chip package structure also includes first and second semiconductor dies respectively arranged over the first and second die regions. In addition, the chip package structure includes first and second gap-filling layers formed over the gap region and separated from one another, and a third gap-filling layer over the gap region and between the first and second gap-filling layers. The Young's modulus of the third gap-filling layer is less than the Young's modulus of the first gap-filling layer and the Young's modulus of the second gap-filling layer.


