Integrated Chip Package Structure for Dense 3D Hybrid Bonding
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing smaller, more densely packed semiconductor devices due to limitations in packaging technologies, which affect the integration and functionality of semiconductor dies, particularly in achieving reliable and efficient 3D and 2.5D packaging solutions.
Innovation Solution
The development of a package structure that includes a substrate with multiple dies or packages, a protective element acting as a warpage-control and heat dissipation component, and advanced interconnection structures using dielectric and conductive layers formed through processes like CVD, ALD, and CMP, enabling direct bonding and hybrid bonding techniques to enhance interconnectivity and reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If new packaging technologies are developed to improve density and functionality of semiconductor dies, then integration and functionality are enhanced, but manufacturing challenges arise
Solution Approach 1:
The patent segments the semiconductor package into multiple independent components: substrate, multiple dies, protective element, and interconnection structures. This segmentation allows each component to be manufactured separately using optimized processes, then assembled into the final high-density package, resolving the manufacturing challenges while maintaining enhanced integration and functionality.
Solution Approach 2:
The patent implements nesting by placing multiple dies on a substrate, with interconnection structures embedded within dielectric layers that connect these dies. The protective element then encapsulates the entire assembly. This nested arrangement achieves high density and functionality while using conventional manufacturing processes for each nested component.
2Area of stationary object
If smaller package structures are developed to take up less space, then space efficiency is improved, but packaging technology limitations affect performance
Solution Approach 1:
The patent transitions from 2D planar packaging to 3D packaging by stacking multiple dies vertically on a substrate and using through-substrate vias for interconnections. This dimensional change reduces the horizontal footprint (improving space efficiency) while maintaining or enhancing performance through multiple interconnection layers and direct die-to-substrate bonding.
Solution Approach 2:
The substrate acts as an intermediary component that supports multiple dies and provides electrical interconnections between them through embedded conductors and vias. This intermediary structure enables compact 3D packaging while maintaining reliable electrical and mechanical connections, resolving the performance concerns associated with smaller package sizes.
3Productivity
If advanced interconnection structures are used to increase bandwidth density, then interconnectivity is enhanced, but device complexity increases
Solution Approach 1:
The substrate serves multiple functions: mechanical support for dies, electrical interconnection through embedded conductors and vias, and thermal management. The dielectric layers simultaneously provide electrical isolation and mechanical support for interconnection structures. This multi-functionality increases bandwidth density while avoiding the need for separate dedicated components, thereby managing device complexity.
Solution Approach 2:
The patent merges the interconnection structures with the dielectric layers by embedding conductors within the dielectric material during the same fabrication process. This consolidation creates a unified interconnection-dielectric system that achieves high bandwidth density through multiple interconnect layers without requiring separate manufacturing steps, thus managing complexity.
Data Source
AI summary
A package structure and a formation method are provided. The method includes disposing a first chip structure and a second chip structure over a carrier substrate. The method also includes forming an interconnection structure directly over and contacting the first chip structure and the second chip structure. The interconnection structure has multiple dielectric layers and multiple conductive features. One of the conductive features extends across a first edge of the first chip structure and a second edge of the second chip structure and is electrically connecting the first chip structure and the second chip structure. The method further includes directly bonding a third chip structure to the interconnection structure through dielectric-to-dielectric bonding and metal-to-metal bonding.