Chip Package Stress Buffer Structure for Dielectric Delamination
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Solution Overview
Problem
The increasing complexity of packaging integrated circuit (IC) chips due to scaling down of semiconductor devices leads to delamination of dielectric layers, which affects the reliability and performance of IC chips.
Innovation Solution
The implementation of a chip package structure with a stress buffer layer having tapered side profiles, combined with dummy metal lines and vias in the seal-ring and scribe lane regions, to mitigate mechanical and thermal stress during the die-singulation process, thereby preventing delamination of dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase storage capacity and processing speed, then device performance is improved, but packaging complexity increases leading to dielectric layer delamination
Solution Approach 1:
The stress buffer layer is formed on the interconnect structure before the die-singulation process to proactively prevent delamination. This preliminary structural preparation mitigates mechanical and thermal stress that would otherwise cause dielectric layer separation during subsequent fabrication steps, thereby maintaining reliability while enabling continued device scaling for improved productivity
Solution Approach 2:
The stress buffer layer acts as an intermediary element between the interconnect structure and the external environment. This intermediate layer absorbs and distributes mechanical and thermal stress, preventing direct transmission of stress to the dielectric layers and thus preventing delamination while allowing continued device scaling
2Ease of manufacture
If standard flat stress buffer layers are used, then manufacturing is simpler, but mechanical and thermal stress causes dielectric layer delamination
Solution Approach 1:
The stress buffer layer is formed with tapered side profiles instead of flat surfaces. This curved geometry allows the layer to better distribute mechanical and thermal stress, preventing dielectric layer delamination. The tapered configuration maintains manufacturability through standard deposition techniques while significantly improving stress distribution and dielectric layer adhesion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces dielectric layer delamination by up to 90%, enhancing IC chip reliability and performance by maintaining structural integrity during fabrication and packaging processes.
Implementation Method 1
a stress buffer layer with tapered side profiles disposed on the interconnect structure... to mitigate mechanical and thermal stress during the die-singulation process
Data Source
AI summary
A chip package and a method of fabricating the same are disclosed. The chip package includes a substrate with a first region, a second region surrounding the first region, and a third region surrounding the second region, a device layer disposed on the substrate, a via layer disposed on the device layer, an interconnect structure disposed on the via layer, and a stress buffer layer with tapered side profiles disposed on the interconnect structure. First and second portions of the via layer above the first and second regions include first and second set of vias. First, second, and third portions of the interconnect structure above the first, second, and third regions include conductive lines connected to the devices, a first set of dummy metal lines connected to the second set of vias, and a second set of dummy metal lines.