Semiconductor Chip Pad-Via Stack for Reliability and Lower RC Delay

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Solution Overview

Problem

Existing semiconductor packages face challenges in achieving improved reliability due to limitations in the structural integrity and electrical connectivity of semiconductor chips.

Innovation Solution

The semiconductor chip design includes a substrate with sequentially stacked layers such as a first interlayer insulating layer, a porous insulating layer, and a second interlayer insulating layer, along with via structures that electrically connect lower and upper pads, enhancing structural support and electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional bonding wires or bumps are used to electrically connect the semiconductor chip to the PCB, then the manufacturing process is simple, but the reliability and durability are insufficient

Engineering Contradiction:
ImprovereliabilityVSAvoidstructural complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the interconnection structure into multiple functional layers: lower pads on the substrate, intermediate pads on the first interlayer insulating layer, and upper pads on the second interlayer insulating layer. This segmentation allows each layer to perform specific functions (mechanical support, electrical connection, stress distribution) thereby improving overall reliability while maintaining manufacturing feasibility through standardized processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from conventional two-dimensional surface mounting (bonding wires/bumps on PCB surface) to a three-dimensional vertical stacking architecture. The multiple pads and insulating layers are arranged in vertical dimensions, enabling improved electrical connectivity and mechanical stability without significantly increasing planar footprint, thus resolving the contradiction between reliability improvement and device complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the thickness of the upper pad is increased to improve electrical connectivity, then the electrical performance improves, but the parasitic capacitance increases causing RC delay

Engineering Contradiction:
Improveelectrical connectivityVSAvoidRC delay
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies different thickness characteristics to different pad regions: the lower pads have a first thickness optimized for mechanical bonding and stress distribution, while the upper pads have a second thickness greater than the first thickness to optimize electrical connectivity. This local differentiation allows each region to be optimized for its specific function without compromising the other, resolving the contradiction between electrical performance and RC delay.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs composite insulating materials with different dielectric properties in different layers. The first interlayer insulating layer and second interlayer insulating layer use materials with controlled dielectric constants and loss tangents, creating a composite structure that minimizes parasitic capacitance while maintaining excellent electrical connectivity. This composite approach allows optimization of both electrical performance and signal integrity.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS20250132228A1Semiconductor chip and semiconductor package comprising the same
Publication Date: 2025.04.24 SAMSUNG ELECTRONICS CO LTD
  • US20250132228A1 patent drawing
  • US20250132228A1 patent drawing
  • US20250132228A1 patent drawing

AI summary

A semiconductor chip and a semiconductor package are provided. The semiconductor chip includes a substrate, a first interlayer insulating layer, a porous insulating layer, and a second interlayer insulating layer stacked on the substrate, lower pads on the second interlayer insulating layer and having a first thickness in a vertical direction, third and fourth interlayer insulating layers stacked on the lower pads and the second interlayer insulating layer, an upper pad on the fourth interlayer insulating layer and having a second thickness in the vertical direction greater than the first thickness, and via structures in the fourth interlayer insulating layer and the third interlayer insulating layer and electrically connecting the lower pads and the upper pad. Each of the via structures includes a first via in the third interlayer insulating layer and a second via in the fourth interlayer insulating layer and overlapping the first via in the vertical direction.